SI5499DC Vishay, SI5499DC Datasheet

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SI5499DC

Manufacturer Part Number
SI5499DC
Description
P-channel 1.5v G-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5499DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI5499DCT1E3
Manufacturer:
TI
Quantity:
4 982
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
DS
- 8
(V)
D
Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free)
1206-8 ChipFET
D
Bottom View
0.036 at V
0.045 at V
0.056 at V
0.077 at V
D
D
http://www.vishay.com/ppg?73257
S
r
D
DS(on)
D
GS
GS
GS
GS
1
(Ω)
®
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
G
J
a, b
= 150 °C)
P-Channel 1.5-V (G-S) MOSFET
Marking Code
BP
a, b
a, b
XXX
I
Part #
Code
D
- 6
- 6
- 6
- 6
(A)
e
c, d
). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
Lot Traceability
and Date Code
A
= 25 °C, unless otherwise noted
Q
14 nC
g
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• Ultra-Low On-Resistance
• Load Switch for Portable Devices
Symbol
T
G
J
- Guaranteed Operation at VGS = 1.5 V Critical for
V
V
I
P
, T
DM
I
I
GS
DS
D
S
P-Channel MOSFET
D
Optimized Design and Longer Battery Life
stg
S
D
®
Power MOSFET: 1.5 V Rated
- 55 to 150
- 6
- 5.6
- 2.1
2.5
1.6
Limit
- 5.2
- 25
- 6
- 6
260
± 5
6.2
- 8
a, b, e
4
a, b
a, b
e
e
a, b
a, b
Vishay Siliconix
Si5499DC
www.vishay.com
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI5499DC Summary of contents

Page 1

... ChipFET Marking Code Bottom View Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width Continuous Source-Drain Diode Current a, b ...

Page 2

... Si5499DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. Maximum under Steady State conditions is 95 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... Document Number: 73321 S-80193-Rev. B, 04-Feb-08 New Product Symbol Test Conditions ° 2 5.6 A, di/dt = 100 A/µ Si5499DC Vishay Siliconix Min. Typ. Max 0 ° www.vishay.com Unit ...

Page 4

... Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.08 0.07 0.06 0.05 0.04 0.03 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) ...

Page 5

... Limited DS(on 0 °C A Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si5499DC Vishay Siliconix 0. 0.08 0. 125 ° °C A 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 50 ...

Page 6

... Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 New Product ...

Page 7

... Document Number: 73321 S-80193-Rev. B, 04-Feb-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5499DC Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 8

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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