SI5515DC Vishay, SI5515DC Datasheet

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SI5515DC

Manufacturer Part Number
SI5515DC
Description
Complementary 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5515DC-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
32 095
Part Number:
SI5515DC-T1-E3
Manufacturer:
VISHY
Quantity:
20 000
Company:
Part Number:
SI5515DC-T1-E3
Quantity:
150
Notes
a.
b.
c.
Document Number: 72221
S-41167—Rev. B, 14-Jun-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
N-Channel
P-Channel
P Channel
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Ordering Information: Si5515DC-T1—E3
D
V
1
DS
−20
1206-8 ChipFETr
D
Parameter
20
20
1
Bottom View
(V)
J
J
D
a
a
S
= 150_C)
= 150_C)
2
a
a
1
D
G
Parameter
2
1
Complementary 20-V (D-S) MOSFET
S
2
a
a
0.086 @ V
0.121 @ V
0.171 @ V
0.040 @ V
0.045 @ V
0.052 @ V
1
G
2
r
DS(on)
a
b, c
GS
GS
GS
GS
GS
GS
T
T
T
T
A
A
A
A
(W)
= −4.5 V
= −2.5 V
= −1.8 V
= 4.5 V
= 2.5 V
= 1.8 V
= 25_C
= 85_C
= 25_C
= 85_C
Marking Code
A
EC
= 25_C UNLESS OTHERWISE NOTED)
Symbol
Steady State
Steady State
T
t v 5 sec
XXX
Part # Code
J
V
V
I
P
P
, T
DM
I
I
I
GS
DS
D
D
S
D
D
I
stg
D
−4.1
−3.4
−2.9
5.9
5.6
5.2
Lot Traceability
and Date Code
(A)
5 secs
5.9
4.2
1.8
2.1
1.1
Symbol
N-Channel
R
R
R
thJA
thJF
G
1
20
20
N-Channel MOSFET
Steady State
FEATURES
D TrenchFETr Power MOSFETS
D Ultra Low r
APPLICATIONS
D Load Switching for Portable Devices
Handling In Compact Footprint
4.4
3.1
0.9
1.1
0.6
D
S
1
1
Typical
−55 to 150
50
90
30
260
"8
DS(on)
5 secs
−4.1
−2.9
−1.8
2.1
1.1
and Excellent Power
Maximum
P-Channel
Vishay Siliconix
G
2
110
60
40
P-Channel MOSFET
−20
−15
Steady State
Si5515DC
−2.2
−0.9
1.1
0.6
−3
D
S
2
2
www.vishay.com
Unit
_C/W
C/W
Unit
_C
_C
W
W
V
V
A
A
1

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SI5515DC Summary of contents

Page 1

... Bottom View Ordering Information: Si5515DC-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si5515DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain-Source On-State Resistance ...

Page 3

... Q − Total Gate Charge (nC) g Document Number: 72221 S-41167—Rev. B, 14-Jun- Si5515DC Vishay Siliconix N−CHANNEL Transfer Characteristics −55_C C 16 25_C 0.0 0.4 0.8 1.2 V − Gate-to-Source Voltage (V) GS Capacitance 800 700 ...

Page 4

... Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 0 250 mA D −0.0 −0.1 −0.2 −0.3 −0.4 −50 − − Temperature (_C) J www.vishay.com 25_C J 0.8 1.0 1.2 100 125 ...

Page 5

... S-41167—Rev. B, 14-Jun-04 −2 − Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot −2 10 Square Wave Pulse Duration (sec Si5515DC Vishay Siliconix N−CHANNEL Notes Duty Cycle Per Unit Base = R ...

Page 6

... Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0. 0. 0.10 0.05 0. − Drain Current (A) D Gate Charge − Total Gate Charge (nC) g Source-Drain Diode Forward Voltage ...

Page 7

... D(on) Limited T = 25_C A 0.1 Single Pulse BV Limited DSS 0.01 0 − Drain-to-Source Voltage (V) DS −2 − Square Wave Pulse Duration (sec) Si5515DC Vishay Siliconix P-CHANNEL Single Pulse Power −4 −3 −2 − 100 Time (sec) P(t) = 0.0001 P(t) = 0.001 P(t) = 0.01 P(t) = 0 100 Notes: ...

Page 8

... Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 8 −2 − Square Wave Pulse Duration (sec) P-CHANNEL 1 10 Document Number: 72221 S-41167—Rev. B, 14-Jun-04 ...

Page 9

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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