VUB60-12NO1 IXYS Corporation, VUB60-12NO1 Datasheet
VUB60-12NO1
Manufacturer Part Number
VUB60-12NO1
Description
Three Phase Rectifier Bridge With Igbt And Fast Recovery Diode For Braking System
Manufacturer
IXYS Corporation
Datasheet
1.VUB60-12NO1.pdf
(4 pages)
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
V
1200
1600
Symbol
V
I
I
I
I
P
-
V
V
I
I
I
I
P
V
I
I
I
I
P
T
T
T
V
M
Weight
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
dAV
dAVM
FSM
2
C25
C70
C80
CM
FAV
FRMS
FRM
FSM
V
t
VJ
VJM
stg
RRM
RRM
tot
CES
GE
tot
RRM
tot
ISOL
d
Test Conditions
T
limited by leads
T
T
T
T
T
T
Continuous
T
T
T
t
T
T
T
T
T
T
T
50/60 Hz
I
Mounting torque
typ.
p
ISOL
H
VJ
VJ
VJ
VJ
H
VJ
H
H
H
H
H
H
H
VJ
VJ
H
£ 1 mA
= 110°C, sinusoidal 120°
= 45°C, t = 10 ms, V
= 150°C, t = 10 ms, V
= 45°C, t = 10 ms, V
= 150°C, t = 10 ms, V
= 80°C per diode
= 25°C to 150°C
= 25°C, DC
= 70°C, DC
= 80°C, DC
= Pulse width limited by T
= 80°C
= 80°C, rectangular d = 0.5
= 80°C, rectangular d = 0.5
= 80°C, t
= 45°C, t = 10 ms
= 150°C, t = 10 ms
= 80°C
Type
VUB 60-12 NO1
VUB 60-16 NO1
P
= 10 µs, f = 5 kHz
t = 1 min
t = 1 s
(M5)
(10-32 unf)
R
R
R
R
= 0 V
= 0 V
= 0 V
= 0V
VJM
1200 / 1600
-40...+150
-40...+125
Maximum Ratings
18-22
2-2.5
1400
1130
1200
1200
3000
3600
± 20
530
475
150
59
70
49
31
23
21
62
70
12
90
75
60
22
35
8
lb.in.
Nm
V~
V~
°C
°C
°C
W
W
W
V
A
A
A
A
V
V
A
A
A
A
V
A
A
A
A
A
A
A
g
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
V
I
dAVM
Soldering connections for PCB
mounting
Isolation voltage 3600 V~
Ultrafast freewheel diode
Convenient package outline
UL registered E 72873
Thermistor
Drive Inverters with brake system
2 functions in one package
No external isolation
Easy to mount with two screws
Suitable for wave soldering
High temperature and power cycling
capability
RRM
= 1200-1600 V
= 70 A
1 2
6 7
4 5
VUB 60
9 10
1 - 4
Related parts for VUB60-12NO1
VUB60-12NO1 Summary of contents
Page 1
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System V Type RRM V 1200 VUB 60-12 NO1 1600 VUB 60-16 NO1 Symbol Test Conditions V RRM 110°C, sinusoidal 120° dAV H I limited ...
Page 2
Symbol Test Conditions 25° RRM 150°C R RRM 25° For power-loss calculations ...
Page 3
W 120 100 P tot d(AV)M Fig. 4 Power dissipation versus direct output current and ambient temperature (Rectifier bridge) 100 T = 25° ...
Page 4
° T =125 =4.7 G 0.1 0 400 800 1200 Fig.11 Reverse biased safe operation area (IGBT) 5 100 ...