DB3S Galaxy Semi-Conductor Holdings Limited, DB3S Datasheet

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DB3S

Manufacturer Part Number
DB3S
Description
Silicon Bidirectional Diacs
Manufacturer
Galaxy Semi-Conductor Holdings Limited
Datasheet

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BL
Document Number 0283001
FEATURES
1111sealed diacs are designed specifically for triggering
1111thyristors.They demonstrate low breakover current at
1111breakover voltage as they withstand peak pulse
1111current,The breakover symmetry is within three
1111volts(DB3,DB4). These diacs are intended for use in
CCCthyrisitors phase control,circuits for lamp dimming,
FFFI
ABSOLUTE RATINGS
Power dissipation on printed
T
Repetitive peak on-state
current
Operating junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
NOTE: *Electrical characteristics applicable in both forw ard and reverse dirctions.
A
=50
SILICON BIDIRECTIONAL DIACS
Dynamic breakover voltage
The three layer,two termnal,axial lead,hermetically
universal motor speed control,and heat control.
o
**Connected in parallel w ith the devices
C circuit (L=10mm)
Breakover voltage symmetry
Breakover voltage
Breakover current
Leakage current
Output voltage
Rise time
Parameters
GALAXY ELECTRICAL
Parameters
(NOTE 1)
(NOTE 1)
(NOTE 1)
(NOTE 1)
(NOTE 1)
f=120Hz
tp=20 S
(NOTE 1)
Symbols
I+V
I± VI
I-V
T
I
V
Pc
TRM
I
T
V
STG
BO
I
t
BO
BO
R
BO
r
BL
J
o
I
I-
GALAXY ELECTRICAL
C=22nf
C=22nf
I=(I
C=22nf
See FIG.1
V
See FIG.1
See FIG.2
See FIG.3
BO
See FIG.1
See FIG.1
R
Test Conditions
=0.5 V
to I
(NOTE 2)
(NOTE 2)
(NOTE 2)
F
R-1
=10mA)
BO
VOLTAGE RANGE: 28-45 V
-40--- +125
-40--- +125
DB3,DB4
150.0
2.0
Min
Max
Max
Max
Max
Typ
Min
Min
Typ
DB3
28
32
36
100.0
Dimensions in millimeters
±3.0
10.0
5.0
5.0
1.5
www.galaxycn.com
DB3.DB4
DB4
35
40
45
UNITS
UNITS
mW
o
o
V
A
V
V
V
C
C
S
A
A
1.

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DB3S Summary of contents

Page 1

BL GALAXY ELECTRICAL SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse 1111current,The breakover symmetry is within three 1111volts(DB3,DB4). These ...

Page 2

RATINGS AND CHARACTERISTIC CURVES FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE +I F 10mA FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR I 90% 10% tr FIG.5--RELATIVE VARIATION OF V TEMPERATURE(TYPICAL VALUES) VBO VBO(T J ...

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