G1G Vishay, G1G Datasheet - Page 2

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G1G

Manufacturer Part Number
G1G
Description
Standard Sinterglass Diode
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
G1G170-AB53-03
Manufacturer:
EBM
Quantity:
21
G1A / B / D / G / J / K / M
Vishay Semiconductors
Maximum Thermal Resistance
T
1)
Electrical Characteristics
T
Typical Characteristics
www.vishay.com
2
Peak forward surge current
Maximum full load reverse
current
Operating junction and storage
temperature range
Typical thermal resistance
Maximum instantaneous
forward voltage
Maximum reverse current
Typical reverse recovery time
Typical junction capacitance
amb
amb
Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted
gg1a_01
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
0.6
0.4
0.2
1.0
0.8
0
0
Parameter
Parameter
Parameter
Figure 1. Forward Current Derating Curve
0.375" (9.5mm)
Lead Length
Capacitance
Ipk/I
25
Load
AV
= 5.0
Ambient T emperature C
50
10
20
1)
75
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method)
full cycle average 0.375 "
(9.5 mm) lead length at
T
I
V
V
I
V
100
F
F
amb
R
R
R
= 1 A
= 0.5 A, I
= V
= V
= 4.0 V, f = 1 MHz
(T
60H
= 100 °C
Inductive Load
amb
125
RRM
RRM
Z
Resistive or
Test condition
Test condition
Test condition
, T
, T
R
= 25 °C unless otherwise specified)
150
= 1.0 A, I
amb
amb
= 25 °C
= 150 °C
175
rr
= 0.25 A
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
gg1a_02
G1G
G1M
G1A
G1B
G1D
G1K
Part
G1J
Part
50
40
30
20
10
Symbol
0
R
1
θJL
Symbol
V
V
V
V
V
V
V
I
I
C
t
R
R
rr
F
F
F
F
F
F
F
j
Number of Cycles at 60H
T
Symbol
J
I
I
R(AV)
, T
FSM
Min
1
STG
T
8.3ms Single Half Sine-W ave
(JEDEC Method)
0
J
Value
= T
55
J max.
- 55 to + 175
Typ.
1.5
15
Z
Document Number 86084
Value
200
50
Rev. 1.3, 11-Aug-04
Max
100
1.2
1.2
1.1
1.1
1.1
1.1
1.1
2.0
VISHAY
100
K/W
Unit
Unit
µA
°C
A
Unit
µA
µA
µs
pF
V
V
V
V
V
V
V

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