DMG2302U Diodes, Inc., DMG2302U Datasheet - Page 3

• Manufacturer Part Number: DMG2302U
• Description: N-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMG2302U
Document number: DS31838 Rev. 2 - 2
0.055
0.045
0.035
0.025
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.06
0.05
0.04
0.03
0.02
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
-50
0.1
Fig. 5 On-Resistance Variation with Temperature
-25
-25
T , AMBIENT TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
A
J
I , DRAIN-SOURCE CURRENT (A)
vs. Drain Current and Gate Voltage
D
0
Fig. 3 Typical On-Resistance
0
25
V
I = 250µA
25
GS
D
I = 5A
D
= 2.5V
50
50
1
I = 1mA
D
V
75
I = 10A
GS
75
D
= 4.5V
100
V
V
V
100
GS
GS
GS
= 1.8V
= 2.5V
= 4.5V
125 150
125 150
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0.055
0.045
0.035
0.025
0.015
0.06
0.05
0.04
0.03
0.02
0.01
10
0.06
0.05
0.04
0.03
0.02
0.01
8
6
4
2
0
0
-50
0
0
Fig. 6 On-Resistance Variation with Temperature
Fig. 8 Diode Forward Voltage vs. Current
-25
Fig. 4 Typical Drain-Source On-Resistance
0.2
V , SOURCE-DRAIN VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
SD
V
J
GS
vs. Drain Current and Temperature
2
= 4.5V
0
0.4
I , DRAIN CURRENT (A)
D
V
25
GS
I = 5A
D
4
= 2.5V
0.6
50
T = 25°C
A
75
V
6
0.8
GS
I = 10A
D
= 4.5V
100
T = 150°C
T = 125°C
T = -55°C
T = 25°C
T = 85°C
A
A
A
A
A
DMG2302U
1.0
8
© Diodes Incorporated
125 150
1.2
June 2009
10