IR20153 International Rectifier Corp., IR20153 Datasheet

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IR20153

Manufacturer Part Number
IR20153
Description
High Side Driver With Recharge
Manufacturer
International Rectifier Corp.
Datasheet

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IR20153S
Manufacturer:
NS
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IR20153S
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IR
Quantity:
20 000
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IR20153STR
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Features
www.irf.com
Description
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side configuration which operates up to 150 volts.
Typical Connection
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
Floating channel designed for bootstrap operation
Fully operational up to 150V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 5V to 20V
Undervoltage lockout
Internal recharge FET for bootstrap refresh
Internal deadtime of 11 s and 0.8 s
CMOS Schmitt-triggered input logic
Output out of phase with input
Reset input
Split pull-up and pull-down gate drive pins
Also available LEAD-FREE (PbF)
RESET
VCC
IN
HIGH SIDE DRIVER WITH RECHARGE
GND
RESET
VCC
IN
HOH
HOL
VB
VS
Product Summary
Preliminary Data Sheet PD60214 Rev B
V
OFFSET
V
t
I
on/off
O
OUT
+/-
IR20153S & (PbF)
up to 150V
400mA @ VBS=7V,
1.5A @ VBS=16V
Package
1.0 and 0.3 s
150V max.
5-20V
8-Lead SOIC
Load
1

Related parts for IR20153

IR20153 Summary of contents

Page 1

... Split pull-up and pull-down gate drive pins Also available LEAD-FREE (PbF) Description The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS output down to 3.3V. The output driver features a high pulse current buffer stage designed for minimum cross-conduction ...

Page 2

... IR20153S & (PbF) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to GND, all currents are defined positive into any lead. This is a stress only rating and operation of the device at these or any conditions exceeding those indicated in the operational sections of this specifications is not implied ...

Page 3

... Input-to-Output Turn-off propogation delay (50% input level to 90% output level) t res,off RES-to-Output Turn-off propogation delay (50% input level to 90% [t phl ] output levels) www.irf.com IR20153S & (PbF) ° = Min. Typ. Max. Units Test Conditions — — ...

Page 4

... IR20153S & (PbF) Electrical Characteristics Unless otherwise specified 0V, RES = 5V, load 6.8nF (see Figure 3). Unless otherwise noted, these specifications apply for an operating ambient temperature of T Symbol Definition Gate Driver Characteristics cont. V Supply Characteristics CC t res,on RES-to-Output Turn-On Propogation Delay ...

Page 5

... RechFET = OFF indicates that the recharge MOSFET is off. Note: Refer to the RESET functionality graph of Figure 7, for VCC and VBS voltage ranges under which 1 the functionality is normal. www.irf.com IR20153S & (PbF) and RechFET is shown as follows. This truth table is for ACTIVE O RESET- IN- ...

Page 6

... IR20153S & (PbF) Functional Block Diagram VCC UV DETECT RESET LOGIC IN Lead Definitions and Assignments Symbol Description V CC Driver Supply I IN- Driver Control Signal Input GND Ground RESET Driver Enable Signal Input V S MOSFET Source Connection H MOSFET Gate Low Connection OL H MOSFET Gate High Connection ...

Page 7

... IN- RESET- HO-VS Figure 1. Input/Output Functional Diagram IN RES HOH,L www.irf.com T T res,on res,off Figure 1a. Reset Timing Diagram IR20153S & (PbF) 7 ...

Page 8

... IR20153S & (PbF) IN RESET Vs HOH,L Recharge FET 10 off OFF T T off_rech on_rech Figure 2. Input/Output Timing Diagram 90 Figure 2a. Output Timing Diagram 5V ON 90% 10% www.irf.com ...

Page 9

... Figure 3. Switching Time Test Circuit 5V Figure 3a. Ton_rech and Toff_rech Test Circuit www.irf.com IR20153S & (PbF) 7V VCC VB IN- HOH GND HOL RESET VCC VB IN- HOH GND HOL RESET 50ohm 6.8nF 50ohm 50ohm 6.8nF 50ohm 9 ...

Page 10

... IR20153S & (PbF) 3.4 3.2 3 2.8 2.6 2.4 2.2 4.4 4.7 5 5.3 5.6 Vsupply (V) Figure 4. Positive Input and Reset Threshold Voltage vs. Vsupply 160 140 120 100 -50 - Figure 6. Input and Reset Impedance vs. Tem perature 10 2.8 2.5 2.2 1.9 1.6 1.3 5.9 6.2 6.5 2.2 1.9 1.6 1.3 1 0.7 0.4 75 100 125 0.6 4.4 4.7 5 5.3 5.6 5.9 6.2 Vsupply (V) Figure 5. Negative Input and Reset Threshold Voltage vs. Vsupply ...

Page 11

... Tem perature, VBS=7V www.irf.com 2200 1800 o -40 C 1400 1000 600 200 4.6 5 1300 1200 1100 1000 900 800 100 150 Figure 11. Turn-on Propagation Delay IR20153S & (PbF) -40C 125C VBS (V) Figure 9. Output Sink Current vs. VBS - 100 Temperature ( C) o vs. Tem perature, VBS=7V 20 150 11 ...

Page 12

... IR20153S & (PbF) 320 280 240 200 - Temperature ( o C) Figure 12. Turn-off Propagation Delay vs. Tem perature, VBS=7V 350 300 250 200 150 100 50 - Temperature ( Figure 14. RES-to-Output Turn-off Propagation Delay vs. Tem perature, VBS=7V 12 1300 1200 1100 1000 100 150 Figure 13 ...

Page 13

... C) Figure 17. Recharge Transistor Turn-on Propagation Delay vs. Temperature, VBS=7V 11 10.5 10 9.5 9 8.5 8 100 150 o C) Figure 19. High Side Turn-off to Recharge Gate Turn-on vs. Tem perature, VBS=7V IR20153S & (PbF 100 Temperature ( 100 Temperature ( o C) 150 150 13 ...

Page 14

... IR20153S & (PbF) 1200 1000 Figure 20. Recharge Gate Turn-off to High Side Case outline 0.25 [.010 0.25 [.010 NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. ...

Page 15

... MARKING CODE P Lead Free Released Non-Lead Free Released Basic Part (Non-Lead Free) 8-Lead SOIC IR20153S order IR20153S Thisproduct has been designed and qualified for the industrial IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com IRxxxxxx YWW? ?XXXX ...

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