IRHSNA57Z60 International Rectifier Corp., IRHSNA57Z60 Datasheet
IRHSNA57Z60
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IRHSNA57Z60 Summary of contents
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... RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level R IRHSNA57Z60 100K Rads (Si) IRHSNA53Z60 300K Rads (Si) IRHSNA54Z60 600K Rads (Si) IRHSNA58Z60 1000K Rads (Si) Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications ...
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... IRHSNA57Z60 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Q g Total Gate Charge Q gs ...
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... On-State Resistance (SMD-2) V Diode Forward Voltage SD 1. Part numbers IRHSNA57Z60, IRHSNA53Z60 and IRHSNA54Z60 2. Part number IRHSNA58Z60 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ...
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... IRHSNA57Z60 10000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 1000 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° 150 C J 100 ° 20µs PULSE WIDTH 1 4.0 5.0 6 Gate-to-Source Voltage (V) GS Fig 3 ...
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... 15V 100 150 200 Q , Total Gate Charge (nC) G Fig 5. Typical Gate Charge Vs. Gate-to-Source Voltage 12V V GS Fig 5b. Gate Charge Test Circuit IRHSNA57Z60 250 300 Current Regulator Same Type as D.U.T. 50K . D.U.T. - 3mA Current Sampling Resistors ...
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... IRHSNA57Z60 200 L IMITED BY PACKAGE 150 100 100 T , Case Temperature ( C) C Fig 6. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET Pulse Width Duty Factor Fig 7a. Switching Time Test Circuit ...
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... 0. Fig 9a. Unclamped Inductive Test Circuit www.irf.com I D TOP 33.5A 47.4A BOTTOM 75A 50 75 100 125 ° Starting T , Junction Temperature ( C) J Vs. Drain Current Fig 9b. Unclamped Inductive Waveforms IRHSNA57Z60 150 ...
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... IRHSNA57Z60 MOSFET Body Diode & Schottky Diode Characteristics 100 Fig Typical Forward Voltage Drop Characterstics 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky 110° 25° -55°C 1 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - ...
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... V DS applied and during irradiation per MlL-STD-750, method 1019, condition A. Specified Radiation Characteristics are for Radiation Hardened MOSFET die only. Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/02 IRHSNA57Z60 TAC Fax: (310) 252-7903 9 ...