MMFT1N10E ON Semiconductor, MMFT1N10E Datasheet

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MMFT1N10E

Manufacturer Part Number
MMFT1N10E
Description
Medium Power Field Effect Transistor
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMFT1N10ET3
Manufacturer:
ON
Quantity:
56 000
MMFT1N10E
Medium Power Field Effect
Transistor
N−Channel Enhancement Mode
Silicon Gate TMOS E−FETt
SOT−223 for Surface Mount
designed to withstand high energy in the avalanche and commutation
modes. This new energy efficient device also offers a drain−to−source
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, dc−dc converters and PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT−223 package which is
designed for medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
(1) Power rating when mounted on FR−4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E−FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
MAXIMUM RATINGS
DEVICE MARKING
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
Drain−to−Source Voltage
Gate−to−Source Voltage — Continuous
Drain Current — Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy — Starting T
1N10
Thermal Resistance — Junction−to−Ambient (surface mounted)
Maximum Temperature for Soldering Purposes,
This advanced E−FET is a TMOS Medium Power MOSFET
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.
Low R
The SOT−223 Package can be Soldered Using Wave or Reflow. The
Available in 12 mm Tape and Reel
Derate above 25°C
(V
Time in Solder Bath
DD
= 60 V, V
DS(on)
— Pulsed
— 0.25 Ω max
GS
= 10 V, Peak I
(T
A
= 25°C unless otherwise noted)
A
= 25°C
L
= 1 A, L = 0.2 mH, R
Rating
G
= 25 Ω)
J
= 25°C
1
MEDIUM POWER, TMOS FET
1
2
Symbol
T
P
R
V
J
V
E
I
, T
3
DM
T
R
I
D
θJA
GS
1 AMP, 100 VOLTS
DS
AS
D
L
(1)
stg
DS(on)
http://onsemi.com
®
4
= 0.25 OHM
−65 to 150
CASE 318E−04, STYLE 3
Publication Order Number:
G
Value
100
± 20
168
156
260
0.8
6.4
10
1
1
4
TO−261AA
MMFT1N10E/D
D
2,4
3
S
mW/°C
Watts
°C/W
Unit
Vdc
Adc
Sec
mJ
°C
°C

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MMFT1N10E Summary of contents

Page 1

... Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die • Available Tape and Reel Use MMFT1N10ET1 to order the 7 inch/1000 unit reel. Use MMFT1N10ET3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (T = 25°C unless otherwise noted) A Rating Drain− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage, (V Zero Gate Voltage Drain Current 100 Gate−Body Leakage Current CHARACTERISTICS Gate Threshold Voltage ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On Region Characteristics −55° ...

Page 4

FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain−to−source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include ...

Page 5

90% 10% 5 4.5 /dt ≤ 400 A/μ 3.5 3 2.5 2 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 10. Commutating Safe Operating Area ...

Page 6

V GS 1400 C iss 1200 C C oss rss 1000 800 600 400 200 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 14. Capacitance Variation With Voltage ...

Page 7

INFORMATION FOR USING THE SOT−223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure ...

Page 8

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of ...

Page 9

STEP 1 STEP 2 STEP 3 PREHEAT VENT HEATING ZONE 1 SOAK" ZONES 2 & 5 RAMP" RAMP" 200°C DESIRED CURVE FOR HIGH MASS ASSEMBLIES 160°C 150°C 150°C 100°C 100°C DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO ...

Page 10

... J 0.009 0.014 0. 0.060 0.078 1.50 L 0.033 0.041 0. 0.264 0.287 6.70 STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMFT1N10E/D MAX 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1. 7.30 ...

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