MASWSS0006 Tyco Electronics, MASWSS0006 Datasheet
MASWSS0006
Manufacturer Part Number
MASWSS0006
Description
Gaas Sp2t 2.5v High Power Switch Dc - 3 Ghz
Manufacturer
Tyco Electronics
Datasheet
1.MASWSS0006.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MASWSS0006TR-3000
Manufacturer:
M/A-COM
Quantity:
951
GaAs SP2T 2.5 V High Power
Switch, DC - 3 GHz
Features
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·
·
·
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·
Description
M/A-COM’s MASWSS0006 is a GaAs PHEMT MMIC
single pole two throw (SP2T) high power switch in a low
cost SOT-26 package. The MASWSS0006 is ideally suited
for applications where high power, low control voltage, low
insertion loss, high isolation, small size and low cost are
required.
Typical applications are for GSM and DCS handset systems
that connect separate transmit and receive functions to a
common antenna, as well as other related handset and
general purpose applications. This part can be used in all
systems operating up to 3 GHz requiring high power at low
control voltage.
The MASWSS0006 is fabricated using a 0.5 micron gate
length GaAs PHEMT process. The process features full
passivation for performance and reliability.
1. External DC blocking capacitors are required on all RF ports.
2. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 100 pF for
Electrical Specifications: T
0.5 GHz - 3 GHz.
Low Voltage Operation: 2.5 V
Excellent Harmonics: <-67 dBc at +34 dBm & 1 GHz
Low Insertion Loss: 0.40 dB at 1 GHz
High Isolation: 20 dB at 2 GHz
SOT-26 Package
0.5 micron GaAs PHEMT Process
Insertion Loss
Gate Leakage
2
3
Parameter
Return Loss
nd
rd
Trise, Tfall
Transients
Ton, Toff
Isolation
P0.1dB
Harmonic
Harmonic
IP3
2
50% control to 90% RF, and 50% control to 10% RF
Two Tone, +26 dBm/tone, 5 MHz Spacing
10% to 90% RF, 90% to 10% RF
1 GHz, P
1 GHz, P
Test Conditions
DC – 1 GHz
DC – 1 GHz
DC – 2 GHz
A
1 – 2 GHz
1 – 2 GHz
2 - 3 GHz
2 - 3 GHz
2 - 3 GHz
> 50 MHz
In Band
= 25°C, Vc = 0 V/2.5 V, Z
IN
IN
—
= +34 dBm
= +34 dBm
SOT-26 Plastic Package
Units
dBm
dBm
dBc
dBc
mV
dB
dB
dB
dB
dB
dB
dB
dB
uS
uS
uA
0
= 50 Ohms
Min.
23.0
17.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
0.40
0.50
0.75
0.04
0.06
-75
-75
26
20
16
20
16
57
39
50
—
1
Max.
0.65
0.75
-67
-67
50
V 3.00
—
—
—
—
—
—
—
—
—
—
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MASWSS0006 Summary of contents
Page 1
... This part can be used in all systems operating GHz requiring high power at low control voltage. The MASWSS0006 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. Electrical Specifications: T ...
Page 2
... Functional Schematic PIN 1 100pF 39 pF 100pF North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574200, Fax+44 (1908) 574300 MASWSS0006 V 3.00 3 Absolute Maximum +38 dBm ±8.5 volts -40°C to +85°C -65°C to +150°C 4,5 V2 ANT– RF1 ANT - RF2 ...
Page 3
... Frequency (GHz) +85°C -40°C 3.0 3.5 4.0 4.5 5.0 Vc (V) Package SOT-26 Plastic Package Tape and Reel (1K Reel) Tape and Reel (3K Reel) Sample Test Board MASWSS0006 Isolation vs. Frequency +25°C +85° 0.0 0.5 1.0 1.5 2.0 Frequency (GHz) 3rd Harmonic vs. Control Voltage, Pin = 34 dBm CW, 1 GHz +25° ...