VI40100G Vishay, VI40100G Datasheet

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VI40100G

Manufacturer Part Number
VI40100G
Description
Dual High-voltage Trench Mos Barrier Schottky Rectifier
Manufacturer
Vishay
Datasheet
Document Number: 88970
Revision: 19-Oct-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
Operating junction and storage temperature
PIN 1
PIN 2
PIN 1
PIN 3
K
V
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TO-220AB
TO-263AB
V40100G
VB40100G
F
at I
T
V
I
J
I
F(AV)
FSM
RRM
F
max.
= 20 A
1
HEATSINK
CASE
K
PIN 2
2
1
2
TMBS
3
A
®
= 25 °C unless otherwise noted)
K
PIN 1
PIN 3
PIN 1
PIN 3
TO-262AA
ITO-220AB
VF40100G
VI40100G
2 x 20 A
Ultra Low V
150 °C
0.67 V
100 V
200 A
V40100G, VF40100G, VB40100G & VI40100G
per device
per diode
PIN 2
PIN 2
K
1
1
2
2
SYMBOL
T
3
J
3
V
F
I
I
F(AV)
V
, T
FSM
RRM
AC
= 0.42 V at I
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
V40100G
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
• Component in accordance to RoHS 2002/95/EC
peak of 245 °C (for TO-263AB package)
and TO-262AA package)
and WEEE 2002/96/EC
F
TO-220AB,
= 5 A
Vishay General Semiconductor
VF40100G
- 40 to + 150
1500
100
200
40
20
VB40100G
ITO-220AB,
VI40100G
TO-263AB
www.vishay.com
UNIT
°C
V
A
A
V
and
1

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VI40100G Summary of contents

Page 1

... Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Isolation voltage (ITO-220AB only) From terminal to heatsink min Operating junction and storage temperature Document Number: 88970 Revision: 19-Oct-07 V40100G, VF40100G, VB40100G & VI40100G Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...

Page 2

... V40100G, VF40100G, VB40100G & VI40100G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown Voltage Instantaneous forward voltage (1) per diode (2) Reverse current per diode Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test pulse width THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ...

Page 3

... Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics 10000 1000 100 0 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 88970 Revision: 19-Oct-07 V40100G, VF40100G, VB40100G & VI40100G 10.0 1.0 0.1 0 100 ° 1.0 MHz mVp-p sig 100 ...

Page 4

... V40100G, VF40100G, VB40100G & VI40100G Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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