UF28100H Tyco Electronics, UF28100H Datasheet
UF28100H
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UF28100H Summary of contents
Page 1
RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband High Saturated Output Power Lower Noise Figure Than Competitive Input Capacitance Qutput Capacitance ReverseCapacitance Power Gain Drain Efficiency Return ...
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RF MOSFET Power Transistor, IOOW, 28V Typical Broadband Performance EFFICIENCY vs FREQUENCY P,,=lO W I,,=600 mA (Push-Pull Device) 80- 401 . . 100 200 300 FREQUENCY (MHz) Curves POWER OUTPUT vs SUPPLY 120 100 ...
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RF MOSFET Power Transistor, Typical Device Impedance Frequency (MHz) 100 300 500 Z,, is the series equivalent input impedance of the device from gate to gate. Z LOAD is !he optimum series equivalent load impedance as measured from drain to ...