CEF658N Chino-Excel Technology Co., Ltd., CEF658N Datasheet - Page 2

• Manufacturer Part Number: CEF658N
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Co., Ltd.

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package I
S(max)
Parameter
= 9.8A .
b
c
c
b
T c = 25 C unless otherwise noted
Symbol
R
V
BV
t
t
V
C
C
I
C
Q
I
GS(th)
DS(on)
d(on)
d(off)
Q
g
I
I
GSSF
Q
GSSR
S
DSS
t
t
SD
oss
FS
iss
rss
r
gd
f
gs
DSS
g
f
CEP658N/CEB658N
2
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 10V, R
= 0V, I
= 160V, V
= 20V, V
= -20V, V
= V
= 10V, I
= 10V, I
= 25V, V
= 100V, I
= 160V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
= 250 µ A
GEN
= 16A
GS
D
D
DS
DS
= 9A
= 250 µ A
= 16A
GS
= 11A,
= 16A,
= 0V,
= 0V
= 0V
= 9.1
= 0V
g
Min
180
2
CEF658N
10.8
Typ
760
155
5.4
60
17
32
90
38
25
12
0.2
-100
Max
0.22
170
1.5
100
25
35
60
75
32
16
4
Units
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
4