CEF01N6 Chino-Excel Technology Co., Ltd., CEF01N6 Datasheet

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CEF01N6

Manufacturer Part Number
CEF01N6
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Chino-Excel Technology Co., Ltd.
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
Rev 1.
N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
Super high dense cell design for extremely low R
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Single Pulsed Avalanche Energy
Repetitive Avalanche Current
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
CEB SERIES
TO-263(DD-PAK)
CEP01N6
CEB01N6
CEI01N6
CEF01N6
Type
2005.December
650V
650V
650V
650V
V
DSS
Parameter
Parameter
CEI SERIES
TO-262(I2-PAK)
a
- Derate above 25 C
R
DS(ON)
15
15
15
15
d
C
= 25 C
1A
1A
1A
1A
I
CEP SERIES
TO-220
D
e
@V
DS(ON)
10V
10V
10V
10V
T c = 25 C unless otherwise noted
GS
CEP01N6/CEB01N6
.
CEI01N6/CEF01N6
1
Symbol
Symbol
T
R
CEF SERIES
TO-220F
I
R
V
V
E
J
DM
P
I
I
,T
AS
DS
GS
D
AS
D
JC
JA
stg
f
TO-220/263/262
G
0.29
62.5
3.5
36
1
4
-55 to 150
Limit
Limit
650
0.8
60
30
TO-220F
http://www.cetsemi.com
0.22
4.5
1
4
28
65
D
S
e
e
Units
Units
W/ C
C/W
C/W
mJ
W
V
V
A
A
A
C

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CEF01N6 Summary of contents

Page 1

... Drain Current-Pulsed Maximum Power Dissipation @ T - Derate above 25 C Single Pulsed Avalanche Energy Repetitive Avalanche Current Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Rev 1. 2005.December CEP01N6/CEB01N6 CEI01N6/CEF01N6 10V 1A 10V 1A 10V e 1A 10V ...

Page 2

... Test : Pulse Width < 300µs, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.L = 190mH 0.8A 50V Starting e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . CEP01N6/CEB01N6 CEI01N6/CEF01N6 unless otherwise noted Symbol Test Condition 0V 250 µ A DSS ...

Page 3

... Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CEP01N6/CEB01N6 CEI01N6/CEF01N6 2.5 2.0 1.5 1.0 0.5 0.0 25 3.0 2.5 2.0 C iss 1.5 1.0 C oss 0.5 C rss 0.0 25 -100 125 150 Figure 6. Body Diode Forward Voltage ...

Page 4

... GS R GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve CEP01N6/CEB01N6 CEI01N6/CEF01N6 Single Pulse - d(on) V OUT V OUT 10% ...

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