CEF02N6G Chino-Excel Technology Co., Ltd., CEF02N6G Datasheet - Page 4

• Manufacturer Part Number: CEF02N6G
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Co., Ltd.

V
Figure 9. Switching Test Circuit
GS
10
8
6
4
2
0
0
10
10
10
V
I
D
DS
=2A
0
-1
-2
10
=480V
-5
R
GEN
Single Pulse
Qg, Total Gate Charge (nC)
D=0.5
0.2
0.1
0.05
0.02
0.01
2
Figure 7. Gate Charge
V
IN
G
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
S
D
-4
V
DD
R
L
6
Square Wave Pulse Duration (sec)
CEP02N6G/CEB02N6G
10
V
OUT
-3
8
4
10
V
V
t
-2
d(on)
OUT
IN
10%
Figure 10. Switching Waveforms
10
10
10
10
0
-1
-2
t
1
50%
on
10
10
10%
Single Pulse
0
R
-1
T
T
DS(ON)
PULSE WIDTH
C
J
V
=175 C
=25 C
90%
t
DS
Figure 8. Maximum Safe
r
INVERTED
CEF02N6G
, Drain-Source Voltage (V)
Limit
P
1. R
2. R
3. T
4. Duty Cycle, D=t1/t2
DM
Operating Area
t
d(off)
10
JM-
θJC
θJC
1
T
t
1
=See Datasheet
C
10
(t)=r (t) * R
50%
= P* R
t
2
0
90%
θJC
t
10%
off
DC
θJC
10
90%
(t)
10ms
2
1ms
100ms
t
f
10
1
10
3
4