CEF04N7 Chino-Excel Technology Co., Ltd., CEF04N7 Datasheet - Page 3

• Manufacturer Part Number: CEF04N7
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Co., Ltd.

900
750
600
450
300
150
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
6
5
4
3
2
1
0
0
-50
0
0
Figure 5. Gate Threshold Variation
V
I
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
V
DS
DS
J
GS
5
, Junction Temperature( C)
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
5
=10,9,8,7V
Figure 3. Capacitance
0
C iss
C oss
C rss
with Temperature
10
25
10
50
15
75
15
20
100
20
25
125
25
150
30
CEP04N7/CEB04N7
4 - 20
CEI04N7/CEF04N7
10
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
-1
1
0
-1
Figure 6. Body Diode Forward Voltage
-100
0.4
V
2
Figure 4. On-Resistance Variation
T
SD
I
V
25 C
Figure 2. Transfer Characteristics
D
J
GS
=150 C
Variation with Source Current
=2A
V
, Body Diode Forward Voltage (V)
T
=10V
GS
-50
J
, Junction Temperature( C)
, Gate-to-Source Voltage (V)
0.6
4
with Temperature
0
-55 C
50
0.8
6
100
1.V
2.Pulse Test
1.0
8
DS
150
=40V
200
1.2
10