SDT02S60 Infineon Technologies Corporation, SDT02S60 Datasheet
SDT02S60
Related parts for SDT02S60
SDT02S60 Summary of contents
Page 1
... Page 1 thinQ! SiC Schottky Diode Product Summary V RRM PG-TO220-2-2. Marking Pin 1 Pin 2 D02S60 C Value 2 F 2.8 FRMS 4.1 FSM 7.3 FRM 17 FMAX 0. 600 RRM 600 RSM 15 tot T -55... +175 j , stg SDT02S60 SDT02S60 V 600 4 Unit A A² °C 2005-02-17 ...
Page 2
... Reverse current =600V, T =25° =600V, T =150° Rev. 2.1 Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol Page 2 SDT02S60 SDT02S60 Values Unit min. typ. max K Values Unit min. typ. max 1. 2.2 2.6 µ 100 - ...
Page 3
... F F Total capacitance =1V, T =25°C, f=1MHz =300V, T =25°C, f=1MHz =600V, T =25°C, f=1MHz Rev. 2 °C, unless otherwise specified j Symbol Q c =150° =150° Page 3 SDT02S60 SDT02S60 Values Unit min. typ. max 5.0 - 2005-02-17 ...
Page 4
... Diode forward current = parameter: T 2.2 A 1.8 1.6 1.4 1.2 0.8 0.6 0.4 0.2 °C 180 Typ. forward power dissipation vs. average forward current P F(AV) =f Page 4 SDT02S60 SDT02S60 ) C ≤175 ° 100 120 140 =100° d=0.1 d=0.2 5 d=0.5 d ...
Page 5
... Typ. C stored energy E =f(V C µ Page SDT02S60 single pulse - 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 100 200 300 400 SDT02S60 SDT02S60 D = 0.50 0.20 0.10 0.05 0.02 0. 600 V R 2005-02-17 ...
Page 6
... Typ. capacitive charge vs. current slope Q =f(di /dt parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 2 A/µs 1000 di /dt F Page 6 SDT02S60 SDT02S60 2005-02-17 ...
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... PG-TO-220-2-2 Rev. 2.1 Page 7 SDT02S60 SDT02S60 2005-02-17 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 8 SDT02S60 SDT02S60 2005-02-17 ...