HSC2228Y Hi-Sincerity Microelectronics Corp., HSC2228Y Datasheet

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HSC2228Y

Manufacturer Part Number
HSC2228Y
Description
Npn Epitaxial Planar Transistor
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet
HSC2228Y
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC2228Y is designed for high voltage amplifier applications.
Absolute Maximum Ratings
Characteristics
Classification of hFE
*VCE(sat)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ..................................................................................... 150 C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25 C) ............................................................................... 900 mW
Maximum Voltages and Currents (Ta=25 C)
VCBO Collector to Base Voltage ...................................................................................... 160 V
VCEO Collector to Emitter Voltage ................................................................................... 160 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ........................................................................................................ 50 mA
*VBE(sat)
BVCBO
BVCEO
BVEBO
Symbol
Range
ICBO
IEBO
*hFE
Rank
Cob
fT
Min.
160
160
60
50
60-120
5
-
-
-
-
-
(Ta=25 C)
HI-SINCERITY
MICROELECTRONICS CORP.
D
Typ.
-
-
-
-
-
-
-
-
-
-
100-200
E
Max.
320
0.6
1
1
1
4
-
-
-
-
160-320
MHz
F
Unit
uA
uA
pF
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=160V, IE=0
VEB=5V
IC=2mA, IB=20mA
IC=2mA, IB=20mA
VCE=10V, IC=10mA
VCE=30V, IC=10mA
VCB=10V, f=1MHZ
Test Conditions
Spec. No. : HE6527-B
Issued Date : 1993.01.15
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification

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HSC2228Y Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2228Y is designed for high voltage amplifier applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ..................................................................................... 150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ............................................................................... 900 mW Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage ...................................................................................... 160 V VCEO Collector to Emitter Voltage ...

Page 2

HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 V =10V CE 100 10 0 Collector Current (mA) Capacitance & Reverse-Biased Voltage 10 Cob 1 0 Reverse Biased Voltage (V) Safe Operating Area 10000 ...

Page 3

... HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 Factory ...

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