FGA70N30T ETC-unknow, FGA70N30T Datasheet

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FGA70N30T

Manufacturer Part Number
FGA70N30T
Description
300v, 70a Pdp Igbt
Manufacturer
ETC-unknow
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGA70N30TDTU
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2006 Fairchild Semiconductor Corporation
FGA70N30T Rev. A
FGA70N30T
300V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS complaint
Application
. PDP System
Thermal Characteristics
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
Absolute Maximum Ratings
V
V
I
P
T
T
T
R
R
C pulse(1)*
stg
J
L
CES
GES
D
Symbol
Symbol
θJC
θJA
(IGBT)
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C E
CE(sat)
=1.5V @ I
Description
Parameter
TO-3P
C
= 40A
@ T
@ T
@ T
C
C
C
= 25
= 25
= 100
1
Using Novel Trench IGBT Technology, Fairchild’s new sesries
of trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
General Description
o
o
o
C
C
C
G
Typ.
--
--
-55 to +150
-55 to +150
Ratings
90.6
300
±30
160
201
300
C
E
Max.
0.62
40
December 2007
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
C
C
C
tm

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FGA70N30T Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient θJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.2 * Ic_pluse limited by max Tj ©2006 Fairchild Semiconductor Corporation FGA70N30T Rev. A General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applica- = 40A C tions where low conduction and switching losses are essential ...

Page 2

... Turn-On Delay Time d(on) t Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc FGA70N30T Rev. A Packaging Package Type TO-3P Tube unless otherwise noted C Test Conditions 250uA 0V 250uA GE C ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.4 Common Emitter V = 15V GE 2.0 1.6 1.2 0 Collector-EmitterCase Temperature, T FGA70N30T Rev. A Figure 2. Typical Output Characteristics 160 10V 120 [V] CE Figure 4. Transfer Characteristics 160 100 [V] CE Figure 6 ...

Page 4

... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 300 100 t r Common Emitter d(on Gate Resistance, R FGA70N30T Rev. A (Continued) Figure 8. Capacitance Characteristics GE 6000 Common Emitter 125 C 5000 C 4000 3000 2000 1000 16 20 [V] GE Figure 10. SOA Characteristics 100 ...

Page 5

... E off E on 100 Common Emitter Gate Resistance 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 1E-3 1E-5 FGA70N30T Rev. A (Continued) Figure 14. Turn-off Characteristics vs. 1000 d(on) 100 60 80 100 [A] C Figure 16. Switching Loss vs. Collector Current 10000 1000 100 = 200V 15V 40A 125 ...

Page 6

... FGA70N30T Rev. A TO-3PN 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA70N30T Rev. A HiSeC™ PowerSaver™ i-Lo™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ ® IntelliMAX™ QFET ISOPLANAR™ ...

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