SIA912DJ Vishay, SIA912DJ Datasheet - Page 4

• Manufacturer Part Number: SIA912DJ
• Description: Dual N-channel 12-v D-s Mosfet
• Manufacturer: Vishay

SiA912DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
Threshold Voltage
T
J
- Source-to-Drain Voltage (V)
I
0.4
J
D
= 150 °C
- Temperature (°C)
= 250 µA
25
0.6
50
75
0.8
0.01
100
0.1
10
T
100
1
J
0.1
= 25 °C
* V
1.0
Safe Operating Area, Junction-to-Ambient
Single Pulse
T
125
Limited by R
GS
A
= 25 °C
New Product
V
minimum V
150
1.2
DS
- Drain-to-Source Voltage (V)
DS(on)
1
BVDSS Limited
GS
*
at which R
10
DS(on)
0.12
0.10
0.08
0.06
0.04
0.02
15
20
10
100 µs
1 ms
10 ms
100 ms
1 s
DC
5
0.001
0
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Pulse (s)
I
D
S-80436-Rev. B, 03-Mar-08
1
Document Number: 74953
= 4.2 A, 25 °C
3
10
I
D
= 4.2 A, 125 °C
4
100
1000
5