SIA811DJ Vishay, SIA811DJ Datasheet - Page 5

• Manufacturer Part Number: SIA811DJ
• Description: P-channel 20-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
0.1
10
0.9
0.8
0.7
0.6
0.5
0.4
1
- 50
0
Soure-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
T
J
J
25
- Temperature (°C)
= 150 °C
0.6
50
I
D
75
= 250 µA
0.8
0.01
10
0.1
Limited by R
100
1
T
I
0.1
D(on)
J
= 25 °C
* V
1
Safe Operating Area, Junction-to-Case
125
limited
Single Pulse
GS
T
A
> minimum V
= 25 °C
DS(on)*
New Product
150
1.2
V
A
DS
= 25 °C, unless otherwise noted
- Drain-to-Source Voltage (V)
1
GS
BVDSS limited
at which R
DS(on)
1 0
0.05
0.25
0.15
0.3
0.2
0.1
15
20
10
0.001
5
0
is specified
0
IDM limited
On-Resistance vs. Gate-to-Source Voltage
100 ms
10 s
10 ms
100 µs
1 s
DC
1 ms
I
D
Single Pulse Power, Junction-to-Ambient
= 2.8 A
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
T
A
= 25 °C
2
Pulse (s)
1
Vishay Siliconix
3
T
SiA811DJ
10
A
= 125 °C
www.vishay.com
4
100
1000
5
5