SIA810DJ Vishay, SIA810DJ Datasheet
SIA810DJ
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SIA810DJ Summary of contents
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... D 0. 2. Ordering Information: SiA810DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ...
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... SiA810DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Case (Drain) (Schottky) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board See Solder Profile ( ttp://www.vishay.com/ppg?73257). The PowerPAK SC- leadless package. The end of the lead terminal is exposed h copper (not plated result of the singulation process in manufacturing ...
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... 125 ° ° ° 125 ° SiA810DJ Vishay Siliconix Min. Typ. Max. 4.5 20 0 ° Min. Typ. Max. 0.41 0.45 0.36 0.41 0.015 0.08 0.50 5.00 0.02 0.10 0 www ...
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... SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 0.0 0.4 0 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.12 0.10 0.08 0.06 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4 Total Gate Charge (nC) g Gate Charge www ...
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... A BVDSS Limited Single Pulse 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient SiA810DJ Vishay Siliconix I = 3.7 A, 125 ° 3 ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 20 10 ...
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... SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -3 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA810DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... SiA810DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T 100 0.1 0.01 0.001 0.0001 0.00001 - Junction Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 New Product = 25 °C, unless otherwise noted 0.10 0.01 75 100 125 150 300 240 180 120 ...
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... Document Number: 74957 S-80436-Rev. B, 03-Mar-08 New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA810DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...