SIA811ADJ Vishay, SIA811ADJ Datasheet
SIA811ADJ
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SIA811ADJ Summary of contents
Page 1
... D 0. 2. Ordering Information: SiA811ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ...
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... SiA811ADJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Case (Drain) (Schottky) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board See Solder Profile ( ttp://www.vishay.com/ppg?73257). The PowerPAK SC- leadless package. The end of the lead terminal is exposed h copper (not plated result of the singulation process in manufacturing ...
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... 125 ° ° ° 125 ° SiA811ADJ Vishay Siliconix Min. Typ. Max 0 ° Min. Typ. Max. 0.41 0.45 0.36 0.41 0.015 0.08 0.5 5.0 0.02 0.10 0.7 7 ...
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... SiA811ADJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.15 0. 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 3 Total Gate Charge (nC) ...
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... BVDSS Limited °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case SiA811ADJ Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... SiA811ADJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -3 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA811ADJ Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... SiA811ADJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T 100 0 0.01 0.001 0.0001 0.00001 - Junction Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 New Product = 25 °C, unless otherwise noted 0.1 0.01 100 125 75 150 0.0 300 240 180 120 ...
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... Document Number: 68955 S-82482-Rev. A, 13-Oct-08 New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA811ADJ Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...