SP8K31 ROHM Co. Ltd., SP8K31 Datasheet

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SP8K31

Manufacturer Part Number
SP8K31
Description
4v Drive Nch+nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SP8K31-TB
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Part Number:
SP8K31FRA
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistor
4V Drive Nch+Nch MOSFET
SP8K31
Silicon N-channel
MOSFET
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
Switching
<It is the same ratings for the Tr1 and Tr2.>
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Type
SP8K31
Structure
Features
Packaging dimensions
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
TB
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
±3.5
±20
±14
150
1.0
2.0
60
14
Unit
∗A protection diode is included between the gate and
°C
°C
W
V
V
A
A
A
A
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
Dimensions (Unit : mm)
Equivalent circuit
SOP8
(8)
(1)
∗1
(7)
(2)
∗2
(6)
(3)
∗1
(5)
(4)
(1) (2) (3) (4)
(8) (7) (6) (5)
Each lead has same dimensions
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
SP8K31
1/4

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SP8K31 Summary of contents

Page 1

... I 1 ∗ ∗ °C Tch 150 −55 to +150 °C Tstg SP8K31 Each lead has same dimensions (8) (7) (6) (5) (8) (7) (6) (5) ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate ∗1 ∗1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain ...

Page 2

... R =10Ω G ∗ − 3.7 5 ∗ − − 1 3.5A D ∗ − − 1 8.6Ω Min. Typ. Max. Unit ∗ − − =3.5A SP8K31 Conditions =0V DS = 1mA D = 10V 30V 10Ω G Conditions =0V GS 2/4 ...

Page 3

... Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( 1000 Ta=25°C f=1MHz = 100 10 0 DRAIN-SOURCE VOLTAGE : V DS Fig.8 Typical Capacitance vs. Drain-Source Voltage SP8K31 1000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 10 0.01 0.1 1 DRAIN CURRENT : I Fig.3 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙ) 300 =3.5A ...

Page 4

... Fig.13 Gate Charge Test Circuit D.U. d(on) Fig.12 Switching Time Waveforms D.U. Fig.14 Gate Charge Waveform SP8K31 Pulse Width 90% 50% 50% 10% 10% 10% 90% 90 d(off off Charge 4/4 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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