SP8K64 ROHM Co. Ltd., SP8K64 Datasheet

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SP8K64

Manufacturer Part Number
SP8K64
Description
4v Drive Nch+nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SP8K64TB
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
4V Drive Nch+Nch MOSFET
SP8K64
Silicon N-channel MOSFET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Switching
<It is the same ratings for the Tr1 and Tr2.>
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Type
SP8K64
Structure
Features
Packaging specifications
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
TB
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
±20
±36
150
1.6
2.0
1.4
30
±9
36
W/ELEMENT
W/TOTAL
Unit
∗A protection diode is included between the gate and
°C
°C
V
V
A
A
A
A
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
Dimensions (Unit : mm)
SOP8
Equivalent circuit
(8)
(1)
∗1
(7)
(2)
∗2
(6)
(3)
∗1
(5)
(4)
Each lead has same dimensions
(1) (2) (3) (4)
(8) (7) (6) (5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
SP8K64
1/4

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SP8K64 Summary of contents

Page 1

... S ∗ ∗2 2.0 W/TOTAL P D 1.4 W/ELEMENT °C Tch 150 −55 to +150 °C Tstg SP8K64 Each lead has same dimensions (8) (7) (6) (5) (8) (7) (6) (5) ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate ∗1 ∗1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) ...

Page 2

... R G ∗ − =9A, 15.0 22 ∗ − − =5V 4 ∗ =1.67Ω, R − − Min. Typ. Max. Unit ∗ − − =9A SP8K64 Conditions =0V DS =0V GS =0V GS =1mA D =10V GS =4.5V GS =4.0V GS =10V DS 15V DD V 15V DD =10Ω G Conditions =0V GS 2/4 ...

Page 3

... iss 1000 C oss C rss 100 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.8 Typical Capacitance vs. Drain-Source Voltage SP8K64 1000 =10V V GS Pulsed Ta=125°C 100 Ta=75°C Ta=25°C Ta= −25° 0.01 0 100 DRAIN CURRENT : I (A) D Fig.3 Static Drain-Source On-State Resistance vs. Drain Current(Ι ...

Page 4

... Fig.11 Source Current vs. Source-Drain Voltage D.U. d(on) Fig.13 Switching Time Waveforms D.U. Fig.15 Gate Charge Waveform SP8K64 Pulse Width 90% 50% 50% 10% 10% 10% 90% 90 d(off off Charge 4/4 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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