NTZD3154N ON Semiconductor, NTZD3154N Datasheet - Page 2

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NTZD3154N

Manufacturer Part Number
NTZD3154N
Description
Small Signal Mosfet 20 V, 540 Ma, Dual Nchannel
Manufacturer
ON Semiconductor
Datasheet

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2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS, V
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Tem-
perature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Parameter
GS
= V (Note 4)
(T
J
= 25°C unless otherwise noted.)
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
t
(BR)DSS
t
C
C
d(OFF)
GS(TH)
C
I
I
G(TOT)
Q
Q
d(ON)
DS(on)
V
g
GSS
G(TH)
t
DSS
OSS
RSS
RR
ISS
t
FS
GD
t
SD
GS
r
f
/T
/T
http://onsemi.com
J
J
V
GS
V
V
V
GS
GS
= 0 V, d
GS
2
= 4.5 V, V
= 4.5 V, V
I
V
= 0 V, f = 1.0 MHz, V
V
V
V
V
S
V
V
V
V
V
DS
DS
GS
GS
GS
GS
GS
DS
= 350 mA
GS
GS
ISD
= 16 V
= 0 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
Test Condition
= 0 V,
= 10 V, I
= 0 V
= V
= 0 V, I
/d
R
DD
DS
t
G
DS
= 100 A/ms, I
= 10 W
= 10 V, I
= 10 V; I
, I
GS
D
D
D
D
D
D
= 250 mA
= 540 mA
= 250 mA
= 540 mA
= 500 mA
= 350 mA
= "4.5 V
D
D
DS
= 540 mA,
= 540 mA
S
T
T
T
T
= 16 V
J
J
= 350 mA
J
J
= 125°C
= 125°C
= 25°C
= 25°C
0.45
Min
20
0.35
Typ
2.0
0.4
0.5
0.7
1.0
1.5
0.1
0.2
6.0
4.0
8.0
0.7
0.6
6.5
14
80
13
10
16
"5.0
Max
0.55
150
1.0
5.0
1.0
0.7
0.9
2.5
1.2
25
20
mV/°C
mV/°C
Unit
nC
mA
mA
pF
ns
ns
W
V
V
S
V

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