NTHD4P02F ON Semiconductor, NTHD4P02F Datasheet
NTHD4P02F
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NTHD4P02F Summary of contents
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... CASE 1206A STYLE 3 MARKING DIAGRAM Specific Device Code M = Month Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping ChipFET 3000/Tape & Reel ChipFET 3000/Tape & Reel (Pb−free) Publication Order Number: NTHD4P02F † ...
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... Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Maximum Voltage Rate of Change Non−Repetitive Peak Surge Current 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. NTHD4P02F T = 25° 25°C unless otherwise noted) ...
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... Figure 3. On−Resistance vs. Gate−to−Source Voltage 1 −2 −4 1.4 1.2 1 0.8 0.6 −50 − −T , JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTHD4P02F (T = 25°C unless otherwise noted 25°C J ≥ − − 0.5 − 25° ...
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... R , GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E−03 1.0E−02 NTHD4P02F (T = 25°C unless otherwise noted 25°C J − OSS Figure 8. Gate− ...
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... Ipk/ 1.5 Ipk/ Ipk/ Ipk/ 0 105 T , LEAD TEMPERATURE (°C) L Figure 16. Current Derating NTHD4P02F (T = 25°C unless otherwise noted 150° 0.1 0.80 0. MAXIMUM INSTANTANEOUS FORWARD F Figure 13. Maximum Forward Voltage 1.0E+1 1.0E+0 1.0E−1 1.0E−2 1.0E−3 1.0E−4 1.0E−5 1.0E−6 1.0E− ...
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... MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads. The minimum recommended pad pattern shown in Figure 19 improves the thermal area of the drain connections (pins 5, 6) while remaining within the confines NTHD4P02F SOLDERING FOOTPRINT* 0.635 0.025 0.457 0.018 mm 0 ...
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... NOM 5° NOM STYLE 3: PIN Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTHD4P02F/D MAX 0.043 0.014 0.008 0.122 0.067 0.017 0.079 ...