ECH8616 Sanyo Semiconductor Corporation, ECH8616 Datasheet

ECH8616

Manufacturer Part Number

ECH8616

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.ECH8616.pdf (4 pages)

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Download datasheet (39Kb)

Ordering number : ENN8191

ECH8616

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : FJ

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

•

Ultrahigh-speed switching.

4V drive.

Composite type, facilitating high-density mounting.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V GSS

V DSS

t d (on)

t d (off)

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

P T

yfs

I D

t r

t f

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =1mA, V GS =0

V DS =60V, V GS =0

V GS = 16V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =1.5A

I D =1.5A, V GS =10V

I D =0.5A, V GS =4V

V DS =20V, f=1MHz

See specified Test Circuit.

ECH8616

Conditions

0.8mm) 1unit

0.8mm)

12505PE TS IM TB-00001009

min

1.2

2.2

Ratings

typ

Ratings

560

3.8

Continued on next page.

--55 to +150

max

150

1.3

1.5

133

2.6

No.8191-1/4

Unit

Related parts for ECH8616

ECH8616 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8616 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... Switching Time Test Circuit V DD =30V V IN 10V =1. =20 D PW= ECH8616 P ECH8616 Symbol Conditions =30V =10V =3A Qgs V DS =30V =10V =3A Qgd V DS =30V =10V = =3A Electrical Connection 8 0. OUT ...

Page 3

... Drain Current Time -- I D 1000 100 1 0.01 0.1 1.0 Drain Current ECH8616 3 =10V 2.5 2.0 1.5 1.0 0 =2.5V 0 0.6 0.7 0.8 0 IT08979 200 Ta=25 C 180 160 140 120 100 --60 --40 IT08981 10 ...

Page 4

... Ambient Temperature Note on usage : Since the ECH8616 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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