NTGF3123P ON Semiconductor, NTGF3123P Datasheet

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NTGF3123P

Manufacturer Part Number
NTGF3123P
Description
Power Mosfet And Schottky Diode
Manufacturer
ON Semiconductor
Datasheet
NTGF3123P
Power MOSFET and
Schottky Diode
20 V, 2.5 A, P−Channel with Schottky
Barrier Diode, TSOP−6 Dual
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
2. Surface Mounted on FR4 Board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 0
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
FETKY® P−Channel and Schottky Diode
Small Size (3 x 3 mm) Dual TSOP−6 Package
Leading Edge Trench Technology for Low On Resistance
Low V
Common Drain/Cathode for Ease of Board Layout
This is a Pb−Free Device
DC−DC Converters; Configured as Asynchronous Buck
Portable Devices like PDA’s, Cellular Phones, and Hard Drives
[2 oz] including traces). Both die on.
(Cu area = 0.0465 in sq [2 oz] including traces). Both die on.
F
Schottky Diode
Parameter
(T
Steady
Steady
Steady
t ≤ 5 s
t ≤ 5 s
State
State
State
J
= 25°C unless otherwise noted)
t
p
= 10 ms
T
T
T
T
T
T
T
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
T
Symbol
J
V
V
, T
I
P
P
DSS
DM
T
I
I
I
GS
D
D
S
D
D
L
STG
−25 to
Value
0.56
±12
150
260
2.3
1.6
2.5
1.1
1.3
1.7
1.2
6.9
0.9
20
1
Unit
°C
°C
W
W
V
V
A
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
V
(BR)DSS
G
V
20 V
P−CHANNEL MOSFET
CASE 318G
R
20 V
S6 = Specific Device Code
M
G
(Note: Microdot may be in either location)
MAX
TSOP6
G
A
S
ORDERING INFORMATION
= Date Code
1
1
2
3
D
= Pb−Free Package
145 mW @ 4.5 V
200 mW @ 2.5 V
SCHOTTKY DIODE
http://onsemi.com
PIN CONNECTION
R
DS(on)
S
MOSFET
(Top View)
V
0.40 V
F
MAX
Publication Order Number:
TYP
SCHOTTKY DIODE
I
D
1
MARKING
DIAGRAM
NTGF3123P/D
6
5
4
MAX (Note 1)
A
S6 MG
2.5 A
I
K/D
K/D
K/D
F
G
1.0 A
K
MAX

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NTGF3123P Summary of contents

Page 1

... TYP I MAX F F 0. SCHOTTKY DIODE MARKING DIAGRAM TSOP6 Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTION K/D (Top View) ORDERING INFORMATION Publication Order Number: NTGF3123P/D ...

Page 2

SCHOTTKY DIODE MAXIMUM RATINGS Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current THERMAL RESISTANCE RATINGS Parameter BOTH DIE ON Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – t ≤ (Note 3) Junction−to−Ambient – Steady ...

Page 3

MOSFET ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time 6. Switching characteristics are independent of ...

Page 4

T = 25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.8 0.6 0.4 0 ...

Page 5

25° TOTAL GATE CHARGE (nC) G Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge ...

Page 6

... D = 0.5 0.2 0.1 0.1 0.05 0.02 0.1 Single Pulse 0.01 0.0001 0.001 ORDERING INFORMATION Device NTGF3123PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.01 0.1 t, TIME (s) Figure 12. Thermal Response Package TSOP6 (Pb−Free) http://onsemi.com 100 † ...

Page 7

... H 2.50 2.75 3.00 0.099 0.108 E q 0° 10° 0° − − 0.7 0.028 mm SCALE 10:1 inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTGF3123P/D MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° ...

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