NTGD3147F ON Semiconductor, NTGD3147F Datasheet

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NTGD3147F

Manufacturer Part Number
NTGD3147F
Description
Power Mosfet And Schottky Diode
Manufacturer
ON Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTGD3147FT1G
Manufacturer:
ON
Quantity:
21 000
NTGD3147F
Power MOSFET and
Schottky Diode
−20 V, −2.5 A, P−Channel with Schottky
Barrier Diode, TSOP−6
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
2. Surface Mounted on FR4 Board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 0
MAXIMUM RATINGS
SCHOTTKY MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Junction−to−Ambient – Steady−State (Note 1)
Junction−to−Ambient – t ≤ 5 s (Note 1)
Junction−to−Ambient Steady−State (Note 2)
Fast Switching
Low Gate Change
Low R
Low V
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
DC−DC Converters
Portable Devices like PDA’s, Cellular Phones, and Hard Drives
[2 oz] including traces).
(Cu area = 30 mm
DS(on)
F
Schottky Diode
Parameter
Parameter
Parameter
2
Steady State
Steady State
[2 oz] including traces).
t ≤ 5 s
t ≤ 5 s
(T
J
= 25°C unless otherwise noted)
T
T
T
T
t
p
A
A
A
A
= 10 ms
= 25°C
= 85°C
= 25°C
= 25°C
(T
J
= 25°C unless otherwise stated)
T
Symbol
Symbol
Symbol
J
V
V
R
R
R
V
, T
I
P
V
RRM
DSS
DM
T
I
I
I
qJA
qJA
qJA
GS
D
S
F
D
R
L
STG
−25 to
Value
Value
Value
−2.2
−1.6
−2.5
−7.5
−0.8
−20
±12
150
260
125
100
235
1.0
1.3
20
20
1
1
°C/W
°C/W
°C/W
Unit
Unit
Unit
°C
°C
W
V
V
A
A
A
V
V
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
G
TC = Specific Device Code
M
G
(Note: Microdot may be in either location)
CASE 318G
V
V
STYLE 15
P−Channel MOSFET
(BR)DSS
−20 V
TSOP−6
R
20 V
Max
= Date Code
G
A
S
1
ORDERING INFORMATION
= Pb−Free Package
1
2
3
D
P−CHANNEL MOSFET
SCHOTTKY DIODE
http://onsemi.com
PIN CONNECTION
145 mW @ −4.5 V
200 mW @ −2.5 V
S
R
(Top View)
DS(on)
V
0.45 V
F
Publication Order Number:
Max
Max
Schottky Diode
1
MARKING
DIAGRAM
A
K
6
5
4
NTGD3147F/D
TC MG
G
K
N/C
D
I
−2.2 A
−1.6 A
D
I
1.0 A
F
Max
Max

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NTGD3147F Summary of contents

Page 1

... Microdot may be in either location) PIN CONNECTION N (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: NTGD3147F/D Max D −2.2 A −1 Max F 1.0 A ...

Page 2

MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES ...

Page 3

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current (T ...

Page 4

TYPICAL PERFORMANCE CHARACTERISTICS 10 −3 −3 −4 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.50 0.45 0.40 ...

Page 5

TYPICAL PERFORMANCE CHARACTERISTICS − TOTAL GATE CHARGE (nC) G Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge ...

Page 6

... V , INSTANTANEOUS FORWARD VOLTAGE (V) F Figure 14. Typical Forward Voltage ORDERING INFORMATION Device NTGD3147FT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.01 0 TIME (s) Figure 13. Thermal Response 100 10 1 0.1 ...

Page 7

... SOURCE 3. GATE 4. DRAIN 5. N/C 6. CATHODE 0.7 0.028 mm SCALE 10:1 inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTGD3147F/D MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° ...

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