NTLJD3182FZ ON Semiconductor, NTLJD3182FZ Datasheet

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NTLJD3182FZ

Manufacturer Part Number
NTLJD3182FZ
Description
Power Mosfet And Schottky Diode
Manufacturer
ON Semiconductor
Datasheet
NTLJD3182FZ
Power MOSFET and
Schottky Diode
−20 V, −4.0 A, mCoolt Single P−Channel
& Schottky Barrier Diode, ESD
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 0
MAXIMUM RATINGS
SCHOTTKY MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Thermal Conduction
Portable Equipment
WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Lowest R
Footprint Same as SC−88 Package
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
ESD Protected
High Current Schottky Diode: 2 A Current Rating
This is a Pb−Free Device
Optimized for Battery and Load Management Applications in
Li−Ion Battery Charging and Protection Circuits
DC−DC Buck Circuit
[2 oz] including traces).
(30 mm
2
, 2 oz Cu).
DS(on)
Parameter
Parameter
Solution in 2x2 mm Package
(T
Steady
Steady
Steady
t ≤ 5 s
t ≤ 5 s
State
State
State
J
= 25°C unless otherwise noted)
t
p
= 10 ms
T
T
T
T
T
T
T
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
(T
J
= 25°C unless otherwise stated)
T
Symbol
Symbol
J
V
V
V
, T
I
P
P
V
RRM
DSS
DM
T
I
I
I
I
GS
D
D
S
F
D
D
R
L
STG
−55 to
Value
Value
±8.0
−3.2
−2.3
−4.0
−2.2
−1.6
0.71
−1.0
−20
−16
150
260
1.5
2.3
2.0
30
30
1
Unit
Unit
°C
°C
W
W
V
V
A
A
A
A
V
V
A
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Pin 1
G
V
D
V
P−CHANNEL MOSFET
(BR)DSS
−20 V
R
20 V
Max
N/C
D
A
ORDERING INFORMATION
JJ
M
G
(Note: Microdot may be in either location)
P−CHANNEL MOSFET
1
2
3
D
PIN CONNECTIONS
SCHOTTKY DIODE
http://onsemi.com
= Specific Device Code
= Date Code
= Pb−Free Package
100 mW @ −4.5 V
144 mW @ −2.5 V
200 mW @ −1.8 V
S
K
R
(Top View)
CASE 506AN
DS(on)
V
0.47 V
WDFN6
F
Publication Order Number:
Max
Max
K
D
SCHOTTKY DIODE
NTLJD3180PZ/D
A
K
6
5
4
MARKING
DIAGRAM
1
2
3
I
K
G
S
−4.0 A
JJMG
D
I
2.0 A
F
G
Max
Max
6
5
4

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NTLJD3182FZ Summary of contents

Page 1

... NTLJD3182FZ Power MOSFET and Schottky Diode −20 V, −4.0 A, mCoolt Single P−Channel & Schottky Barrier Diode, ESD Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent Thermal Conduction • Lowest R Solution in 2x2 mm Package DS(on) • Footprint Same as SC−88 Package • ...

Page 2

THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State Min Pad (Note 4) Junction−to−Ambient – t ≤ (Note 3) 3. Surface Mounted on FR4 Board using pad size (Cu area ...

Page 3

... Forward Voltage Maximum Instantaneous Reverse Current ORDERING INFORMATION Device Order Number NTLJD3182FZTAG NTLJD3182FZTBG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/ 25°C unless otherwise noted) J Symbol ...

Page 4

TYPICAL PERFORMANCE CURVES 8 −2 −2 − −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.12 0 125°C J 0.08 T ...

Page 5

TYPICAL PERFORMANCE CURVES 600 400 200 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 V = −5 −2 −4 100 ...

Page 6

TYPICAL PERFORMANCE CURVES 1000 D = 0.5 100 0.2 0.1 10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 (T = 25°C unless otherwise noted (pk DUTY CYCLE 0.001 ...

Page 7

TYPICAL SCHOTTKY PERFORMANCE CURVES 85° 125° 25° −55°C J 0.1 0.1 0.2 0.3 0.4 0.5 0 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F Figure 13. Typical Forward ...

Page 8

... PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A 0.70 0.80 A1 0.00 0.05 A3 0.20 REF L b 0.25 0.35 D 2.00 BSC D2 0.57 0.67 E 2.00 BSC E2 0.90 1.10 e 0.65 BSC F 0.15 BSC K 0.25 REF L 0.20 0.30 L1 --- 0.10 SOLDERMASK DEFINED MOUNTING FOOTPRINT 1.74 2X 0.77 1.10 0.47 2.30 1 0.65 PITCH 0.35 DIMENSIONS: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTLJD3182FZ/D ...

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