NTMKE4894N ON Semiconductor, NTMKE4894N Datasheet - Page 5

• Manufacturer Part Number: NTMKE4894N
• Description: Power Mosfet 25 V, 160 A, Single N?channel, Icepak
• Manufacturer: ON Semiconductor

9000
8000
7000
6000
5000
4000
3000
2000
1000
1000
1000
0.01
100
100
0.1
10
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0.01
1
1
0
0
1
t
d(off)
Figure 9. Resistive Switching Time Variation
V
I
V
0 ≤ V
Single Pulse
T
D
Figure 11. Maximum Rated Forward Biased
DD
GS
C
t
t
= 27 A
f
r
= 25°C
= 15 V
= 4.5 V
V
GS
DS
Figure 7. Capacitance Variation
5
≤ 20 V
, DRAIN−TO−SOURCE VOLTAGE (V)
C
C
C
0.1
R
Thermal Limit
Package Limit
R
iss
oss
rss
G
DS(on)
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
Limit
10
1
15
TYPICAL CHARACTERISTICS
10
20
V
T
J
GS
= 25°C
http://onsemi.com
10 ms
100 ms
1 ms
10 ms
= 0 V
t
dc
d(on)
100
100
25
5
600
550
500
450
400
350
300
250
200
150
100
50
45
40
35
30
25
20
15
10
50
12
10
5
0
0
8
6
4
2
0
0.4
0
25
Figure 10. Diode Forward Voltage vs. Current
V
T
Q
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
10
J
GS
T
gs
= 25°C
J
, STARTING JUNCTION TEMPERATURE(°C)
= 0 V
V
SD
20
0.5
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
Q
g
30
, TOTAL GATE CHARGE (nC)
gd
40
0.6
75
QT
50
60
0.7
100
70
80
I
T
V
D
125
J
0.8
GS
I
= 27 A
= 25°C
90
D
= 4.5 V
= 62 A
100
150
110
0.9