NTMFS4835N ON Semiconductor, NTMFS4835N Datasheet

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NTMFS4835N

Manufacturer Part Number
NTMFS4835N
Description
Power Mosfet 30 V, 104 A, Single N-channel, So-8 Fl
Manufacturer
ON Semiconductor
Datasheet

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NTMFS4835NT1G
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NTMFS4835NT1G(4835N)
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NTMFS4835NT3G
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ON Semiconductor
Quantity:
500
NTMFS4835N
Power MOSFET
30 V, 104 A, Single N-Channel, SO-8 FL
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb-Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2007
September, 2007 - Rev. 4
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain-to-Source Avalanche
Energy T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
CPU Power Delivery
DC-DC Converters
Low Side Switching
qJA
qJA
qJC
= 28 A
(Note 1)
(Note 2)
(Note 1)
DS(on)
pk
J
qJA
qJA
qJC
= 25°C, V
, L = 1.0 mH, R
to Minimize Conduction Losses
Parameter
DD
Steady
State
= 50 V, V
(T
G
J
= 25 W
T
= 25°C unless otherwise stated)
t
p
A
= 10 ms
= 25°C,
GS
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
= 10 V,
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
V
T
d
V
E
I
T
P
P
P
DSS
DM
STG
V
T
I
I
I
I
GS
AS
D
D
D
S
J
D
D
D
/d
L
,
t
-55 to
Value
+150
2.27
0.89
62.5
±20
104
208
392
260
9.0
30
20
14
12
75
52
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
†For information on tape and reel specifications,
NTMFS4835NT1G
NTMFS4835NT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SO-8 FLAT LEAD
V
(BR)DSS
CASE 488AA
30 V
A
Y
WW
G
(Note: Microdot may be in either location)
Device
STYLE 1
G (4)
ORDERING INFORMATION
1
N-CHANNEL MOSFET
= Assembly Location
= Year
= Work Week
= Pb-Free Package
http://onsemi.com
5.0 mW @ 4.5 V
3.5 mW @ 10 V
D (5,6)
R
DS(ON)
(Pb-Free)
(Pb-Free)
Package
SO-8 FL
SO-8 FL
Publication Order Number:
MAX
S (1,2,3)
G
S
S
S
MARKING
DIAGRAM
NTMFS4835N/D
AYWWG
Tape & Reel
Tape & Reel
4835N
Shipping
D
D
1500 /
5000 /
I
G
D
104 A
MAX
D
D

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NTMFS4835N Summary of contents

Page 1

... (5,6) G (4) S (1,2,3) N-CHANNEL MOSFET MARKING DIAGRAM 4835N S 1 AYWWG STYLE 1 = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION † Package Shipping SO-8 FL 1500 / (Pb-Free) Tape & Reel SO-8 FL 5000 / (Pb-Free) Tape & Reel Publication Order Number: NTMFS4835N/D ...

Page 2

... Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. NTMFS4835N (T = 25°C unless otherwise specified) J Symbol Test Condition = 250 ...

Page 3

... Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. NTMFS4835N (T = 25°C unless otherwise specified) J Symbol Test Condition ...

Page 4

... GATE-TO-SOURCE VOLTAGE (VOLTS) GS Figure 3. On-Resistance vs. Gate-to-Source Voltage 2 1.5 1.0 0.5 0 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTMFS4835N TYPICAL PERFORMANCE CURVES 170 ≥ 4 150 130 3.5 V 110 ...

Page 5

... SINGLE PULSE T = 25° LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTMFS4835N TYPICAL PERFORMANCE CURVES 25° iss oss ...

Page 6

... NTMFS4835N TYPICAL PERFORMANCE CURVES 1000 100 100 PULSE WIDTH (ms) Figure 13. Avalanche Characteristics http://onsemi.com 6 25°C 100°C 125°C 1000 10000 ...

Page 7

... D 5.15 BSC D1 4.50 4.90 5.10 D2 3.50 --- 4.22 E 6.15 BSC E1 5.50 5.80 6.10 E2 3.45 --- 4.30 e 1.27 BSC G 0.51 0.61 0. 0.51 --- --- L 0.51 0.61 0.71 L1 0.05 0.17 0.20 M 3.00 3.40 3. --- 12 SOLDERING FOOTPRINT 1.270 0.750 4X 1.000 0.965 2X 0.905 2X 4.530 0.475 2X 1.530 4.560 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4835N/D ...

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