US5U30 ROHM Co. Ltd., US5U30 Datasheet

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... Drive Pch+SBD MOSFET US5U30 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward voltage. Applications ...

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... Typ. Max. Unit Conditions − − −1 =−0.4A Min. Typ. Max. Unit Conditions − − 0. =0.1A F − − 0. =0.5A F − − µA 100 V =20V R US5U30 =0V DS =0V GS =0V GS =−1mA D =−4.5V =−4V =−2.5V GS =−0. =−4. =10Ω G =0V Rev.B 2/4 ...

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... Ta=25 C f=1MHZ V 1000 100 0.01 0 Drain−Source Voltage : −V [V] DS Fig.8 Typical Capactitance vs.Drain−Source Voltage US5U30 1000 =−4.5V 100 Ta=125°C 75°C 25°C −25° 0.1 1 Drain Current : −I [A] D Fig.3 Static Drain−Source On−State Resistance vs.Drain Current 1000 ...

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... Fig.15 Gate Charge Measurement Circuit 1000 Ta=125°C 75°C 25°C −25°C 100 10 1 0.1 0 0.1 0.2 0.3 0.4 0.5 6 Forward Voltage :V [V] F Fig.11 Forward Temperature Characteristics DS US5U30 100 10 1 0.1 0.01 0.001 0.0001 0 Reverse Voltage : V [V] R Fig.12 Reverse Temperature Characteristics Pulse Width V GS 10% 50% 50% ...

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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...