NMSD200B01 Diodes, Inc., NMSD200B01 Datasheet

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NMSD200B01

Manufacturer Part Number
NMSD200B01
Description
200 Ma Synchronous Rectifier Featuring N-mosfet And Schottky Diode
Manufacturer
Diodes, Inc.
Datasheet
Features
Mechanical Data
Thermal Characteristics
General Description
Maximum Ratings, Total Device
Power Dissipation (Note 3)
Power Derating Factor above 25 °C
Output Current
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of N-MOSFET)
Notes:
DS30911 Rev. 5 - 2
NMSD200B01 is best suited for switching voltage
regulator and power management applications. It
improves efficiency and reliability of DC-DC controllers
used in Voltage Regulator Modules (VRM) and can
support continuous maximum current of 200mA. It
features an ESD protected discrete N-MOSFET with low
on-resistance and a discrete Schottky diode with low
forward drop. It reduces component count, consumes
less space and minimizes parasitic losses. The
component devices can be used as a part of a circuit or
as a stand alone discrete device.
N-MOSFET with ESD Gate Protection
N-MOSFET with Low On-Resistance (R
Low V
Low Static, Switching and Conduction Losses
Good Dynamic Performance
Surface Mount Package Suited for Automated Assembly
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-363
Case Material: Molded Plastic. "Green Molding"
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 7
Ordering Information: See Last Page
Weight: 0.006 grams (approximate)
1.
2.
3.
DMN601K_DIE (ESD Protected)
f
Schottky Diode
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Sub-Components
SD103AWS_DIE
Characteristic
Characteristic
200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE
DS(ON)
)
@T
A
= 25°C unless otherwise specified
Reference
Q1
D1
www.diodes.com
Symbol
Symbol
T
R
P
j
I
, T
1 of 8
P
out
θ JA
der
d
stg
Schottky Diode
Device Type
Fig 2. Schematic and Pin Configuration
N-MOSFET
1
2
-55 to +150
Fig 1. SOT-363
Value
Value
3
200
200
625
1.6
NMSD200B01
6
5
4
Figure
2
2
mW/°C
°C/W
Unit
Unit
mW
© Diodes Incorporated
mA
°C
NMSD200B01

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NMSD200B01 Summary of contents

Page 1

... SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE General Description • NMSD200B01 is best suited for switching voltage regulator and power management applications. It improves efficiency and reliability of DC-DC controllers used in Voltage Regulator Modules (VRM) and can support continuous maximum current of 200mA. It features an ESD protected discrete N-MOSFET with low on-resistance and a discrete Schottky diode with low forward drop ...

Page 2

... A Unit Test Condition 10μ =20mA =200mA F μ 30V 0V 1.0 MHz 200 mA 0.1xI © Diodes Incorporated Unit Unit 0.25mA D = 1mA D = DS(ON) I =200mA D = 100 Ω NMSD200B01 ...

Page 3

... T , JUNCTION TEMPERATURE (°C) ch Fig. 6 Gate Threshold Voltage vs. Junction Temperature DS30911 Rev 0.1 75 100 125 150 Fig. 7 Static Drain-Source On-Resistance vs. Drain Current www.diodes.com V , GATE-SOURCE VOLTAGE GS Fig. 5 Transfer Characteristics I DRAIN CURRENT ( NMSD200B01 © Diodes Incorporated ...

Page 4

... I DRAIN CURRENT ( Fig. 8 Static Drain-Source On-Resistance vs. Drain Current JUNCTION TEMPERATURE ( C) j Fig. 10 Static Drain-Source On-State Resistance vs. Junction Temperature DS30911 Rev Fig. 9 Static Drain-Source On-Resistance vs. Gate-Source Voltage ° www.diodes.com V GATE SOURCE VOLTAGE (V) GS, NMSD200B01 © Diodes Incorporated ...

Page 5

... Fig. 16 Total Capacitance vs. Reverse Voltage DS30911 Rev 1000 100 ° ° ° ° -40 C 0.1 A 0.01 800 600 1000 www.diodes.com INSTANTANEOUS REVERSE VOLTAGE (V) R Fig. 15 Reverse Characteristics NMSD200B01 © Diodes Incorporated 40 35 ...

Page 6

... Application Details ESD Protected N-MOSFET (DMN601K) and Schottky Barrier Diode (SD103AWS) integrated as one in NMSD200B01 can be used as a discrete entity for general applications or part of circuits to function as a low side switch in a Synchronous Rectifier. The N-MOSFET is selected based on the input voltage range as the maximum duty cycles can be greater than 45% ...

Page 7

... YM = Date Code Marking SR1 Y = Year, e.g 2006 M = Month, e.g September Fig. 20 2007 2008 2009 Mar Apr May Jun Jul www.diodes.com Shipping 3000/Tape & Reel 2010 2011 X Y Aug Sep Oct Nov © Diodes Incorporated 2012 Z Dec D NMSD200B01 ...

Page 8

... President of Diodes Incorporated. DS30911 Rev SOT-363 Dim Min A 0.10 B 1.15 C 2.00 D 0.65 Nominal F 0.30 H 1.80 ⎯ 0.90 L 0.25 M 0.10 M α 0° All Dimensions in mm Figure 22 Dimensions *Typical dimensions in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65 NMSD200B01 © Diodes Incorporated ...

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