SIR492DP Vishay, SIR492DP Datasheet - Page 2

• Manufacturer Part Number: SIR492DP
• Description: N-channel 12-v D-s Mosfet
• Manufacturer: Vishay

SiR492DP
Vishay Siliconix
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 70 °C/W.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
a, b
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
DS
g
Q
R
oss
t
t
DS
t
t
iss
rss
gd
fs
gs
r
f
r
f
g
g
/T
/T
J
J
Steady State
t ≤ 10 s
New Product
V
V
I
V
V
D
DS
I
DS
D
DS
DS
≅ 5 A, V
≅ 5 A, V
= 12 V, V
V
= 6 V, V
V
V
V
V
= 6 V, V
V
V
V
V
= 6 V, V
DS
DS
V
GS
DS
DS
GS
GS
DD
DD
Test Conditions
DS
= V
= 0 V, V
≥ 5 V, V
= 0 V, I
= 12 V, V
= 4.5 V, I
= 2.5 V, I
= 6 V, R
= 6 V, R
I
GEN
D
= 5 V, I
f = 1 MHz
GEN
GS
GS
GS
= 250 µA
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, f = 1 MHz
Symbol
= 0 V, T
= 8 V, R
D
= 8 V, I
D
GS
GS
R
R
D
L
L
= 250 µA
= 250 µA
GS
D
D
thJA
thJC
= 15 A
= 1.2 Ω
= 1.2 Ω
= ± 8 V
= 4.5 V
= 15 A
= 10 A
= 0 V
D
J
g
D
= 10 A
g
= 55 °C
= 1 Ω
= 10 A
= 1 Ω
Typical
2.9
25
Min.
0.4
12
30
Maximum
0.0031
0.0037
3720
1290
Typ.
- 3.1
110
840
125
4.5
8.5
1.4
12
73
41
27
53
12
16
55
53
9
S-82288-Rev. B, 22-Sep-08
3.5
30
Document Number: 68840
0.0038
0.0047
± 100
Max.
110
190
1.0
2.1
10
62
41
80
18
25
85
80
15
1
°C/W
Unit
mV/°C
Unit
nA
µA
nC
pF
ns
Ω
Ω
V
V
A
S