SIR472DP Vishay, SIR472DP Datasheet - Page 4

• Manufacturer Part Number: SIR472DP
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiR472DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
75
I
D
0.8
= 250 µA
0.01
T
100
0.1
J
10
100
1
= 25 °C
0.1
1.0
Safe Operating Area, Junction-to-Ambient
Limited by R
* V
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
V
1.2
150
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
0.030
0.025
0.020
0.015
0.010
0.005
0.000
DS(on)
10
40
30
20
10
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 ms
100 ms
1 s
100 µs
1 ms
10 s
DC
0.1
2
V
100
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
S-82488-Rev. C, 13-Oct-08
Document Number: 68897
10
6
T
T
J
J
100
= 25 °C
= 125 °C
8
1000
10