SIR164DP Vishay, SIR164DP Datasheet - Page 4

• Manufacturer Part Number: SIR164DP
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiR164DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
0.8
J
= 25 °C
0.01
100
0.1
Limited by R
10
100
1
0.01
1.0
I
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
125
= 5 mA
T
A
GS
= 25 °C
DS(on)
New Product
> minimum V
1.2
150
V
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.012
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
0
0
10
0 .
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
1
T
1
J
= 25 °C
1 ms
10 ms
1 s
10 s
DC
100 ms
2
V
0.01
100
GS
Single Pulse Power
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
T
S09-0701-Rev. A, 27-Apr-09
J
= 125 °C
Document Number: 64827
6
7
1
I
D
8
= 15 A
9
10
1
0