MTD6N20E ON Semiconductor, MTD6N20E Datasheet

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MTD6N20E

Manufacturer Part Number
MTD6N20E
Description
Power Mosfet 6 Amps, 200 Volts
Manufacturer
ON Semiconductor
Datasheet

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MTD6N20E
Power MOSFET
6 Amps, 200 Volts
N−Channel DPAK
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
MAXIMUM RATINGS
Techniques Reference Manual, SOLDERRM/D.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance − Junction−to−Case
Maximum Temperature for Soldering
This advanced Power MOSFET is designed to withstand high
Discrete Fast Recovery Diode
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a
Diode is Characterized for Use in Bridge Circuits
I
Pb−Free Package is Available*
pad size.
DSS
− Continuous
− Non−repetitive (t
− Continuous
− Continuous @ 100°C
− Single Pulse (t
Derate above 25°C
Energy − Starting T
(V
I
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Purposes, 1/8″ from case for 10 secs
L
DD
= 6.0 Apk, L = 3.0 mH, R
and V
= 80 Vdc, V
DS(on)
Rating
p
GS
≤ 10 ms)
Specified at Elevated Temperature
p
J
≤ 10 ms)
= 10 Vdc,
= 25°C
(T
C
GS
= 25°C unless otherwise noted)
A
Preferred Device
= 1.0 MW)
G
= 25°C (Note 2)
= 25 W)
Symbol
T
V
V
V
R
R
R
J
V
E
I
P
DGR
GSM
, T
T
DSS
DM
I
I
qJC
qJA
qJA
GS
D
D
AS
D
L
stg
−55 to
Value
± 20
± 40
1.75
2.50
71.4
200
200
150
100
260
6.0
3.8
0.4
18
50
54
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
6N20E Device Code
Y
WW
G
1 2
1
2
3
6 AMPERES, 200 VOLTS
3
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
G
4
R
4
DS(on)
http://onsemi.com
CASE 369C
CASE 369D
STYLE 2
STYLE 2
DPAK
DPAK
N−Channel
D
= 460 mW
Publication Order Number:
S
Gate
Gate
1
DIAGRAMS
MARKING
1
4 Drain
4 Drain
Drain
Drain
MTD6N20E/D
2
2
3
Source
3
Source

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MTD6N20E Summary of contents

Page 1

... R = 460 mW DS(on) N−Channel MARKING DIAGRAMS 4 Drain 4 DPAK CASE 369C STYLE Drain Gate Source 4 4 Drain DPAK CASE 369D STYLE Gate Drain Source = Year = Work Week = Pb−Free Package ORDERING INFORMATION Publication Order Number: MTD6N20E/D ...

Page 2

... Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. MTD6N20E (T = 25°C unless otherwise noted ...

Page 3

... Temperature 2 2.0 1.5 1.0 0.5 0 − 50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature MTD6N20E 12 ≥ GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics ...

Page 4

... GSP 900 750 600 450 300 150 0 MTD6N20E POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For MTD6N20E 1000 100 ...

Page 6

... DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E−05 1.0E− Figure 14. Diode Reverse Recovery Waveform MTD6N20E SAFE OPERATING AREA 100 100 1000 STARTING JUNCTION TEMPERATURE (°C) J Figure 12 ...

Page 7

... ORDERING INFORMATION Device MTD6N20E MTD6N20E1 MTD6N20ET4 MTD6N20ET4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MTD6N20E Package DPAK DPAK Straight Lead DPAK DPAK (Pb−Free) http://onsemi.com 7 † ...

Page 8

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MTD6N20E PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 9

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MTD6N20E/D ...

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