RSM002P03 ROHM Co. Ltd., RSM002P03 Datasheet
Home Datasheets MOSFETs, GaNFETs - Single RSM002P03
Manufacturer Part Number
RSM002P03
Description
4v Drive Pch Mos Fet
Manufacturer
ROHM Co. Ltd.
Available stocks
Part Number:
RSM002P03 T2L
Manufacturer:
Rohm Semiconductor
Part Number:
RSM002P03 T2L
Transistors
4V Drive Pch MOSFET
RSM002P03
Silicon P-channel MOSFET
1) Low On-resistance.
2) Small package (VMT3).
3) 4V drive.
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
∗ Each terminal mounted on a recommended land
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Type
RSM002P03
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
8000
T2L
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
P
DSS
GSS
I
DP
D
D
∗1
∗2
∗
−55 to +150
Limits
Limits
±0.2
±0.4
0.15
833
−30
±20
150
Inner circuit
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Dimensions (Unit : mm)
(1)Gate
(2)Source
(3)Drain
VMT3
°C/W
Unit
Unit
(1)
°C
°C
W
V
V
A
A
∗1
0.22
Abbreviated symbol : WP
(3)
0.32
0.4 0.4
( 1 )
1.2
0.8
(3)
(2)
( 2 )
∗2
RSM002P03
Rev.A
0.5
(1) Gate
(2) Source
(3) Drain
0.13
1/4
Related parts for RSM002P03
RSM002P03 Summary of contents
... Limits Unit − DSS ± GSS ±0 ∗1 ±0 ∗ °C Tch 150 −55 to +150 °C Tstg Symbol Limits Unit ∗ °C/W Rth(ch-a) 833 RSM002P03 1.2 0.32 ( 0.22 0.13 0.4 0.4 0.5 0.8 Abbreviated symbol : WP (3) ∗2 ∗1 (2) (1) Gate (2) Source (3) Drain Rev.A 1/4 ...
... −10V V GS ∗ − − 100Ω L − − ∗ 10Ω G Min. Typ. Max. Unit − − −1.2 = −0.1A RSM002P03 Conditions =0V DS = −1mA D = −10V GS = −4. −4. −0.15A D −15 V Conditions =0V GS Rev.A 2/4 ...
... On-State Resistance vs. Gate-Source Voltage Pulsed Ta=125°C 75°C 25°C −25°C 1 0.1 1 0.01 0.1 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) RSM002P03 8 Ta=25°C = −15V = −15V −10V 7 I =−250mA D =10Ω R =10Ω Pulsed ...
... Transistors 10 Ta=25°C Pulsed = − −4. −10V 0.01 0.1 DRAIN CURRENT : −I (A) D Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι RSM002P03 Rev.A 4/4 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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