RTF025N03 ROHM Co. Ltd., RTF025N03 Datasheet

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RTF025N03

Manufacturer Part Number
RTF025N03
Description
2.5v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
2.5V Drive Nch MOSFET
RTF025N03
Silicon N-channel MOSFET
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Source current
(Body diode)
Type
RTF025N03
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Package
Code
Basic ordering unit (pieces)
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TL
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
±2.5
±10
150
0.6
0.8
30
12
10
Inner circuit
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Dimensions (Unit : mm)
(1) Gate
(2) Source
(3) Drain
TUMT3
(1)
Unit
°C
°C
W
V
V
A
A
A
A
∗1
Abbreviated symbol : PL
(3)
(2)
∗2
(1) Gate
(2) Source
(3) Drain
Rev.A
RTF025N03
1/2

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RTF025N03 Summary of contents

Page 1

... BODY DIODE Symbol Limits V 30 DSS V 12 GSS ±2 ∗1 ± 0.6 S ∗ ∗2 P 0.8 D Tch 150 −55 to +150 Tstg RTF025N03 Abbreviated symbol : PL (3) ∗2 (1) ∗1 (2) (1) Gate (2) Source (3) Drain Unit °C °C Rev.A 1/2 ...

Page 2

... L − − ∗ =10Ω G ∗ − 3.7 5 15V DD ∗ − − 0 4.5V GS ∗ − − 1 2.5A D Min. Typ. Max. Unit − − 1 0.6A RTF025N03 Conditions =0V DS = 1mA Conditions =0V GS Rev.A 2/2 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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