RSS100N03 ROHM Co. Ltd., RSS100N03 Datasheet

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RSS100N03

Manufacturer Part Number
RSS100N03
Description
4v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistor
4V Drive Nch MOS FET
RSS100N03
Silicon N-channel MOS FET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Power switching, DC/DC converter.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Channel to ambient
Type
RSS100N03
1 Pw≤10µs, Duty cycle≤1%
2 Mounted on a ceramic board.
Mounted on a ceramic board.
Applications
Structure
Features
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
Rth (ch-a)
TB
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
1
1
2
−55 to +150
Limits
Limits
62.5
±10
±40
150
1.6
6.4
30
20
2
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
External dimensions (Unit : mm)
Equivalent circuit
SOP8
(8)
(1)
∗2
°C / W
Unit
Unit
1pin mark
°C
°C
W
V
V
A
A
A
A
(7)
(2)
(6)
(3)
∗1
1.27
( 8 )
( 1 )
0.4
5.0
(5)
(4)
( 5 )
( 4 )
Each lead has same dimensions
(1) (2) (3) (4)
(8) (7) (6) (5)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
1.75
0.2
RSS100N03
Rev.A
1/3

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RSS100N03 Summary of contents

Page 1

... S ∗ 6 ∗ °C Tch 150 −55 to +150 °C Tstg Symbol Limits Unit ∗ ° 62.5 RSS100N03 5.0 1.75 0 0.2 1.27 Each lead has same dimensions (6) (5) (8) (7) (6) (5) (1) (2) (3) (4) ∗1 (1)Source (2)Source (3)Source (4)Gate (5)Drain (3) (4) (6)Drain (7)Drain (8)Drain Rev ...

Page 2

... R =10Ω G ∗ − ∗ − − 2 =5V GS ∗ − − 5 =10A D Min. Typ. Max. Unit ∗ − − 1 =6.4A RSS100N03 Conditions =0V DS =0V GS =0V GS =1mA D =10V GS =4.5V GS =4V GS =10V DS 15V DD 15V Conditions =0V GS Rev.A 2/3 ...

Page 3

... On-State Resistance vs. Gate-Source Voltage 1000 =4. Pulsed Ta=125°C Ta=75°C 100 Ta=25°C Ta= −25° 0.01 0 100 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) RSS100N03 8 Ta=25°C =15V =10A I D =10Ω Pulsed ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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