NTR4171P ON Semiconductor, NTR4171P Datasheet

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NTR4171P

Manufacturer Part Number
NTR4171P
Description
Power Mosfet
Manufacturer
ON Semiconductor
Datasheet

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NTR4171PT1G
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NTR4171P
Power MOSFET
−30 V, −3.5 A, Single P−Channel, SOT−23
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 0
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t ≤ 10 s (Note 1)
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
Low R
Low Threshold Voltage
High Power and Current Handling Capability
This is a Pb−Free Device
Load Switch
Optimized for Battery and Load Management Applications in
[2 oz] including traces)
DS(on)
at Low Gate Voltage
Parameter
Parameter
(T
J
Steady
State
t ≤ 5 s
Steady
State
t ≤ 5 s
= 25°C unless otherwise noted)
t
p
= 10 ms
T
T
T
T
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
Symbol
Symbol
R
R
V
V
T
I
P
T
DSS
T
I
DM
qJA
qJA
I
stg
GS
D
S
J
D
L
,
−55 to
Value
−15.0
Max
−2.2
−1.5
−3.5
0.48
1.25
−1.0
260
100
−30
±12
150
260
1
°C/W
Unit
Unit
mA
°C
°C
W
V
V
A
A
†For information on tape and reel specifications,
NTR4171PT1G
NTR4171PT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
1
Device
(BR)DSS
−30 V
TRF
M
G
(Note: Microdot may be in either location)
CASE 318
STYLE 21
SOT−23
2
ORDERING INFORMATION
G
P−CHANNEL MOSFET
= Specific Device Code
= Date Code
= Pb−Free Package
http://onsemi.com
3
110 mW @ −4.5 V
150 mW @ −2.5 V
75 mW @ −10 V
R
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
DS(on)
S
MARKING DIAGRAM/
Publication Order Number:
PIN ASSIGNMENT
Gate
MAX
1
D
10000/Tape & Reel
3000/Tape & Reel
TRFMG
Drain
3
G
Shipping
NTR4171P/D
I
D
−2.2 A
−1.8 A
−1.0 A
Source
MAX
2

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NTR4171P Summary of contents

Page 1

... P−CHANNEL MOSFET MARKING DIAGRAM/ PIN ASSIGNMENT 3 3 Drain 2 TRFMG Gate Source = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION † Package Shipping SOT−23 3000/Tape & Reel (Pb−Free) SOT−23 10000/Tape & Reel (Pb−Free) Publication Order Number: NTR4171P/D ...

Page 2

MOSFET ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance Forward Transconductance CHARGES, CAPACITANCES AND ...

Page 3

V 9.0 −10 V 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1 0.5 1.0 1.5 2.0 2.5 3.0 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.30 0.25 0.20 0.15 0.10 0.05 0 1.0 ...

Page 4

C iss 800 700 600 500 400 300 C oss 200 100 C rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 V = − ...

Page 5

V GS Single Pulse T = 25° 1.0 0.1 0.01 0.1 Figure 13. Maximum Rated Forward Biased 1.0 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.0001 0.001 0.01 TYPICAL CHARACTERISTICS = ...

Page 6

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTR4171P/D ...

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