NTD12N10 ON Semiconductor, NTD12N10 Datasheet

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NTD12N10

Manufacturer Part Number
NTD12N10
Description
Power Mosfet 12 Amps, 100 Volts Nchannel Enhancementmode Dpak
Manufacturer
ON Semiconductor
Datasheet

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NTD12N10
Power MOSFET
12 Amps, 100 Volts
N−Channel Enhancement−Mode DPAK
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 7
MAXIMUM RATINGS
Drain−to−Source Voltage
Drain−to−Source Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
Maximum Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
L
Fast Recovery Diode
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Avalanche Energy Specified
I
Mounting Information Provided for the DPAK Package
Pb−Free Packages are Available
PWM Motor Controls
Power Supplies
Converters
pad size.
Derate above 25°C
DD
= 12 Apk, L = 1.0 mH, R
DSS
= 50 Vdc, V
and R
− Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
DS(on)
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Continuous @ T
− Pulsed (Note 3)
GS
Rating
J
= 10 Vdc,
= 25°C
Specified at Elevated Temperature
(T
C
G
GS
A
A
= 25°C unless otherwise noted)
= 25 W)
Preferred Device
= 25°C (Note 1)
= 25°C (Note 2)
= 1.0 MW)
A
A
p
= 25°C
=100°C
≤ 10 ms)
Symbol
T
V
V
V
R
R
R
J
V
E
I
P
DGR
GSM
, T
T
DSS
DM
I
I
qJC
qJA
qJA
GS
D
D
AS
D
L
stg
−55 to
Value
+175
± 20
± 30
56.6
0.38
1.76
1.28
2.65
100
100
117
260
7.0
12
36
75
85
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
W
W
1 2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
V
2
(BR)DSS
100 V
3
3
Y
WW
T12N10
G
ORDERING INFORMATION
4
4
G
http://onsemi.com
(Surface Mount)
(Straight Lead)
CASE 369C
CASE 369D
165 mW @ 10 V
STYLE 2
STYLE 2
R
N−Channel
DPAK
DPAK
DS(on)
= Year
= Work Week
= Device Code
= Pb−Free Package
D
Publication Order Number:
MARKING DIAGRAMS
& PIN ASSIGNMENTS
TYP
S
Gate
Gate
1
1
Drain
Drain
Drain
Drain
NTD12N10/D
4
2
4
2
I
D
12 A
MAX
3
Source
3
Source

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NTD12N10 Summary of contents

Page 1

... PIN ASSIGNMENTS 4 Drain 4 DPAK CASE 369C (Surface Mount) STYLE Drain Gate Source 4 Drain 4 DPAK CASE 369D (Straight Lead) STYLE Gate Drain Source Y = Year WW = Work Week T12N10 = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD12N10/D ...

Page 2

... Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device NTD12N10 NTD12N10G NTD12N10−1 NTD12N10−1G NTD12N10T4 NTD12N10T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD12N10 (T = 25°C unless otherwise noted ...

Page 3

... Figure 3. On−Resistance versus Drain Current and Temperature 2.5 2 1.5 1 0.5 0 −50 − 100 T , JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTD12N10 24 ≥ 25° ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE NTD12N10 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTD12N10 1000 100 ...

Page 6

... DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 I Figure 14. Diode Reverse Recovery Waveform NTD12N10 SAFE OPERATING AREA 100 STARTING JUNCTION TEMPERATURE (°C) J Figure 12. Maximum Avalanche Energy versus P ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD12N10 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 8

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD12N10/D ...

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