NTD4810NH ON Semiconductor, NTD4810NH Datasheet

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NTD4810NH

Manufacturer Part Number
NTD4810NH
Description
Power Mosfet 30 V, 54 A, Single Nchannel, Dpak/ipak
Manufacturer
ON Semiconductor
Datasheet
NTD4810NH
Power MOSFET
30 V, 54 A, Single N−Channel, DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 0
Continuous Drain
Current (R
Power Dissipation
(R
Continuous Drain
Current (R
Power Dissipation
(R
Continuous Drain
Current (R
(Note 1)
Power Dissipation
(R
Pulsed Drain Current
Current Limited by Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
L = 0.3 mH, I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Drain−to−Source Voltage
Gate−to−Source Voltage
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low R
These are Pb−Free Devices
CPU Power Delivery
DC−DC Converters
qJA
qJA
qJC
) (Note 1)
) (Note 2)
) (Note 1)
DS(on)
G
DD
qJA
qJA
qJC
L(pk)
= 24 V, V
) (Note 1)
) (Note 2)
)
to Minimize Conduction Losses
Parameter
= 21 A, R
GS
(T
t
= 10 V,
J
Steady
p
State
G
=10ms
= 25°C unless otherwise noted)
= 25 W)
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
I
Symbol
DmaxPkg
T
V
dV/dt
V
J
E
I
P
P
P
, T
T
DSS
DM
I
I
I
I
GS
D
D
D
AS
S
D
D
D
L
stg
−55 to
Value
"20
10.8
1.28
120
175
260
8.4
2.0
8.6
6.7
6.0
30
54
42
50
45
41
66
1
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
1 2
CASE 369C
(Bent Lead)
V
Drain
Drain 3
(BR)DSS
STYLE 2
30 V
DPAK
4
2
Source
3
ORDERING INFORMATION
Y
WW
4810NH = Device Code
G
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
http://onsemi.com
Gate
16.7 mW @ 4.5 V
(Straight Lead)
10 mW @ 10 V
CASE 369AC
R
1
Drain
DS(on)
= Year
= Work Week
= Pb−Free Package
Drain
3 IPAK
D
1
4
2
2 3
Publication Order Number:
S
3
MAX
Source
4
Gate
N−Channel
(Straight Lead
NTD4810NH/D
CASE 369D
1
1
Drain
Drain
DPAK)
2
IPAK
4
I
D
2
3
54 A
MAX
3
Source
4

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NTD4810NH Summary of contents

Page 1

... IPAK CASE 369AC CASE 369D (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4810NH = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD4810NH/D ...

Page 2

... Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. NTD4810NH Parameter (T = 25°C unless otherwise noted) J Symbol Test Condition ...

Page 3

... Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance NTD4810NH (T = 25°C unless otherwise noted) J Symbol Test Condition 25° ...

Page 4

... GS Figure 3. On−Resistance vs. Gate−to−Source Voltage 2 1.5 1.0 0.5 0 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTD4810NH TYPICAL PERFORMANCE CURVES 70 4.5 V ≥ 4 ...

Page 5

... V GS SINGLE PULSE T = 25° LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTD4810NH TYPICAL PERFORMANCE CURVES 25° 25° iss ...

Page 6

... ORDERING INFORMATION Order Number NTD4810NHT4G NTD4810NH−1G NTD4810NH−35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD4810NH TYPICAL PERFORMANCE CURVES 25°C 100°C 125°C 10 100 PULSE WIDTH (ms) Figure 13 ...

Page 7

... PL 0.13 (0.005) G 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/ SEATING PLANE NTD4810NH PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE ...

Page 8

... J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4810NH/D ...

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