NTB52N10 ON Semiconductor, NTB52N10 Datasheet

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NTB52N10

Manufacturer Part Number
NTB52N10
Description
N-channel Enhancementmode D2pak
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB52N10G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTB52N10T4
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
NTB52N10
Power MOSFET
52 Amps, 100 Volts
N−Channel Enhancement−Mode D
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
2. When surface mounted to an FR4 board using the minimum recommended
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
Drain−to−Source Voltage
Drain−to−Source Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Derate above 25°C
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8in from case for 10 seconds
L(pk)
Fast Recovery Diode
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Avalanche Energy Specified
I
Mounting Information Provided for the D
Pb−Free Packages are Available
PWM Motor Controls
Power Supplies
Converters
pad size, (Cu. Area 0.412 in
DD
DSS
= 40 A, L = 1.0 mH, R
= 50 Vdc, V
and R
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
DS(on)
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Continuous @ T
− Pulsed (Note 1)
GS
Rating
J
= 10 Vdc,
Specified at Elevated Temperature
= 25°C
(T
J
= 25°C unless otherwise noted)
G
GS
A
A
= 25 W)
2
= 25°C
= 25°C (Note 2)
).
= 1.0 MW)
A
A
p
= 25°C
= 100°C
v10 ms)
2
PAK Package
Symbol
T
V
V
V
R
R
R
J
V
E
I
GSM
P
, T
DSS
DGR
T
I
I
DM
qJC
qJA
qJA
GS
AS
D
D
D
L
stg
−55 to
Value
+150
"20
"40
1.43
62.5
100
100
156
178
800
260
2.0
0.7
52
40
50
2
PAK
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
mJ
°C
°C
W
W
NTB52N10
NTB52N10G
NTB52N10T4
NTB52N10T4G
†For information on tape and reel specifications,
1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
CASE 418B
100 V
2
V
STYLE 2
D
DSS
3
2
NTB52N10 = Device Code
A
Y
WW
G
PAK
ORDERING INFORMATION
G
http://onsemi.com
4
30 mW @ 10 V
R
N−Channel
(Pb−Free)
(Pb−Free)
Package
DS(ON)
= Assembly Location
= Year
= Work Week
= Pb−Free Package
D
D
D
D
2
2
2
2
D
PAK
PAK
PAK
PAK
MARKING DIAGRAM
& PIN ASSIGNMENT
Publication Order Number:
Gate
TYP
S
1
NTB
52N10G
AYWW
Drain
Drain
800 / Tape & Reel
800 / Tape & Reel
4
2
50 Units / Rail
50 Units / Rail
Shipping
NTB52N10/D
I
D
3
Source
52 A
MAX

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NTB52N10 Summary of contents

Page 1

... G S MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 NTB 52N10G 3 AYWW 2 D PAK STYLE 2 Gate Drain Source NTB52N10 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Package Shipping 2 D PAK 50 Units / Rail 2 D PAK 50 Units / Rail (Pb−Free) ...

Page 2

... BODY−DRAIN DIODE RATINGS (Note 3) Diode Forward On−Voltage ( Adc Reverse Recovery Time Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperature. NTB52N10 (T = 25°C unless otherwise noted) C Symbol Vdc ...

Page 3

... Temperature 2 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0 −60 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTB52N10 100 ≥ 5 4 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2 ...

Page 4

... NTB52N10 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTB52N10 100 1000 100 ...

Page 6

... DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 Figure 14. Diode Reverse Recovery Waveform NTB52N10 SAFE OPERATING AREA 800 700 10 ms 600 500 100 ms 400 300 dc 200 100 0 100 1000 ...

Page 7

... CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB52N10 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 8

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTB52N10/D ...

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