NE570 ON Semiconductor, NE570 Datasheet

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NE570

Manufacturer Part Number
NE570
Description
Compandor
Manufacturer
ON Semiconductor
Datasheet

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NE570
Compandor
either channel may be used as a dynamic range compressor or
expandor. Each channel has a full−wave rectifier to detect the average
value of the signal, a linerarized temperature−compensated variable
gain cell, and an operational amplifier.
communications systems, modems, telephone, and satellite
broadcast/receive audio systems.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
May, 2006 − Rev. 4
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Maximum Operating Voltage
Operating Ambient Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction−to−Ambient
The NE570 is a versatile low cost dual gain control circuit in which
The NE570 is well suited for use in cellular radio and radio
DG CELL IN
Complete Compressor and Expandor in One IC
Temperature Compensated
Greater than 110 dB Dynamic Range
Operates Down to 6.0 V
System Levels Adjustable with External Components
Distortion may be Trimmed Out
Pb−Free Packages are Available*
Cellular Radio
Telephone Trunk Comandor
High Level Limiter
Low Level Expandor − Noise Gate
Dynamic Noise Reduction Systems
Voltage−Controlled Amplifier
Dynamic Filters
Semiconductor Components Industries, LLC, 2006
RECT IN
Rating
R
R
2
1
20 kW
10 kW
RECT CAP
THD TRIM
DC
RECTIFIER
VARIABLE
Figure 1. Block Diagram
GAIN
Symbol
R
V
P
T
T
qJA
CC
A
D
J
R
R
R
20 kW
30 kW
3
4
3
0 to +70
Value
150
400
105
24
1.8 V
V
REF
INVERTER IN
1
Unit
V
mW
C/W
DC
C
C
+
DG_CELL_IN_1
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
RECT_CAP_1
THD_TRIM_1
RECT_IN_1
OUTPUT_1
RES_R3_1
SOIC−16 WB
CASE 751G
INV_IN_1
OUTPUT
D SUFFIX
ORDERING INFORMATION
GND
1
A
WL = Wafer Lot
YY = Year
WW = Work Week
G
PIN CONNECTIONS
http://onsemi.com
= Assembly Location
= Pb−Free Package
1
2
3
4
5
6
7
8
(Top View)
Publication Order Number:
Plastic Small Outline Package;
16 Leads; Body Width 7.5 mm
16
1
AWLYYWWG
16
15
14
13
12
11
10
9
MARKING
DIAGRAM
NE570D
RECT_CAP_2
RECT_IN_2
DG_CELL_IN_2
V
INV_IN_2
RES_R3_2
OUTPUT_2
THD_TRIM_2
CC
NE570/D

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NE570 Summary of contents

Page 1

... NE570 Compandor The NE570 is a versatile low cost dual gain control circuit in which either channel may be used as a dynamic range compressor or expandor. Each channel has a full−wave rectifier to detect the average value of the signal, a linerarized temperature−compensated variable gain cell, and an operational amplifier. ...

Page 2

... Input to V and V grounded 775 mV . RMS 5. Relative to value NE570 External Capacitor Pinout for Rectifier 1 Rectifier 1 Input Variable Gain Cell 1 Input Ground Inverted Input 1 R3 Pinout 1 Output 1 Total Harmonic Distortion Trim 1 Total Harmonic Distortion Trim 2 Output 2 R3 Pinout 2 ...

Page 3

... CIRCUIT DESCRIPTION The NE570 compandor building blocks, as shown in the block diagram, are a full−wave rectifier, a variable gain cell, an operational amplifier and a bias system. The arrangement of these blocks in the IC result in a circuit which can perform well with few external components, yet can be adapted to many diverse applications. The full− ...

Page 4

... CIRCUIT BACKGROUND The NE570 Compandor was originally designed to satisfy the requirements of the telephone system. When several telephone channels are multiplexed onto a common line, the resulting signal−to−noise ratio is poor and companding is used to allow a wider dynamic range to be passed through the channel ...

Page 5

... B = 140 EXTERNAL COMPONENTS Figure 6. Basic Expander NE570 Figure 7 shows the hook−up for a compressor. This is essentially an expander placed in the feedback loop of the op amp. The DG cell is set−up to provide AC feedback only for the a separate DC feedback loop is provided by the two ...

Page 6

... C R Figure 8. Rectifier Concept NE570 respectively. ICs such as this have typical NPN ’s of 200 and PNP ’s of 40. The ’s of 0.995 and 0.975 will produce errors of 0.5% on negative swings and 2.5% on positive swings. The 1.5% average of these errors yields a mere 0.13 dB gain error. ...

Page 7

... Figure 12. Simplified DG Cell Schematic NE570 The op amp maintains the base and collector of Q ground potential (V input current I Q along with the current I 1 been set at twice the value of I The op amp has thus forced a linear current swing between ...

Page 8

... VCA GAIN (dB) Figure 15. Dynamic Range NE570 Control signal feedthrough is generated in the gain cell by imperfect device matching and mismatches in the current sources, I and will cause a small output signal. The distortion trim is G effective in nulling out any control signal feedthrough, but in general, the null for minimum feedthrough will be different than the null in distortion ...

Page 9

... SOIC−16 WB NE570DR2 SOIC−16 WB NE570DR2G SOIC−16 WB †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NE570 Package Temperature Range + +70 C (Pb−Free + +70 C (Pb− ...

Page 10

... PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS DIM MIN MAX A 2.35 2.65 A1 0.10 0.25 B 0.35 0.49 C 0.23 0.32 D 10.15 10.45 E 7.40 7.60 e 1.27 BSC H 10.05 10.55 h 0.25 0.75 L 0.50 0. Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NE570/D ...

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