VEC2307 Sanyo Semiconductor Corporation, VEC2307 Datasheet

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VEC2307

Manufacturer Part Number
VEC2307
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENA0113
VEC2307
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : CH
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
The best suited for load switches.
4V drive.
Composite type, facilitaing high-density mounting.
Mount height 0.75mm.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
P T
yfs
I D
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
Mounted on a ceramic board (900mm
I D =--1mA, V GS =0V
V DS =- -30V, V GS =0V
V GS = 16V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -1A
I D =--1A, V GS =- -10V
I D =--0.5A, V GS =- -4V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
VEC2307
Conditions
Conditions
2
2
0.8mm)1unit
0.8mm)
D1505PE MS IM TB-00001874
min
--1.2
--30
1.2
Ratings
typ
Ratings
130
225
200
2.0
47
32
--55 to +150
Continued on next page.
max
150
--2.6
--30
0.9
1.0
170
320
20
--2
--8
10
No. A0113-1/4
--1
Unit
Unit
m
m
pF
pF
pF
W
W
V
V
A
A
V
V
S
C
C
A
A

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VEC2307 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2307 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... See specified Test Circuit See specified Test Circuit =--10V -10V =--2A Qgs V DS =--10V -10V =--2A Qgd V DS =--10V -10V =-- =--2A = =15 V OUT VEC2307 Ratings min typ max 7.2 2.9 21 8.7 5.5 0.98 0.82 --0.85 Electrical Connection 8 ...

Page 3

... Drain Current Time -- 15V --10 V 100 (on 1 --0.1 --1.0 Drain Current VEC2307 -- --10V --3 --2 --1 0 --0.8 --0.9 --1.0 0 --0.5 IT10320 500 Ta=25 C 450 400 350 300 250 200 150 100 50 0 --8 --10 --60 --40 ...

Page 4

... Ambient Temperature Note on usage : Since the VEC2307 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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