VEC2301 Sanyo Semiconductor Corporation, VEC2301 Datasheet

VEC2301

Manufacturer Part Number

VEC2301

Description

P-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.VEC2301.pdf (4 pages)

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Ordering number : ENN7647

Preliminary

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : BA

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

•

Best suited for load switches.

Low ON-resistance.

2.5V drive.

Composite type, facilitating high-density

mounting.

Mount height 0.75mm

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

General-Purpose Switching Device Applications

V (BR)DSS

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

P T

I D

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =--1mA, V GS =0

V DS =- -20V, V GS =0

V GS = 8V, V DS =0

VEC2301

Package Dimensions

unit : mm

2227

Conditions

Top View

2.9

6 5

0.65

0.8mm)1unit

0.8mm)

0.3

[VEC2301]

min

P-Channel Silicon MOSFET

--20

52004 TS IM TA-100771

0.15

Ratings

typ

Ratings

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

SANYO : VEC8

Bottom View

VEC2301

Continued on next page.

--55 to +150

max

150

--20

--12

0.9

1.0

--1

--3

No.7647-1/4

Unit

Related parts for VEC2301

VEC2301 Summary of contents

Page 1

... Mounted on a ceramic board (900mm P T Mounted on a ceramic board (900mm Tch Tstg Symbol Conditions V (BR)DSS I D =--1mA DSS -20V GSS 8V P-Channel Silicon MOSFET VEC2301 [VEC2301] Bottom View 0.3 0. Source1 0. Gate1 2 Source2 4 : Gate2 5 : Drain2 ...

Page 2

... See specified Test Circuit See specified Test Circuit =--10V =--4.5V =--3A Qgs V DS =--10V =--4.5V =--3A Qgd V DS =--10V =--4.5V =-- =--3A Electrical Connection --1. =6.67 V OUT VEC2301 S --7 --6 --5 --4 --3 --2 --1 --0.7 --0.8 --0.9 --1.0 IT06416 Ratings min ...

Page 3

... Drain Current --4 --10V --3A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge VEC2301 140 Ta=25 C 120 100 --8 --9 --10 --60 --40 IT06418 -- --10V --1 --0 --0. --0 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2004. Specifications and information herein are subject to change without notice. VEC2301 2 0.8mm) 120 140 ...

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