DME375A Microsemi Corporation, DME375A Datasheet

DME375A

Manufacturer Part Number

DME375A

Description

375 Watts, 50 Volts, Pulsed Avionics 1025-1150 Mhz

Manufacturer

Microsemi Corporation

Datasheet

1.DME375A.pdf (4 pages)

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Price

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BOSTOCK HK LIMITED

Part Number:

DME375A

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Company:

Meier Automation Equipment Co., Limited

Part Number:

DME375A

Manufacturer:

MICROSEMI/美高森美

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20 000

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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GENERAL DESCRIPTION

The DME375A is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1025-1150 MHz. The device

has gold thin-film metallization for proven highest MTTF.

includes input and output prematch for broadband capability. Low thermal

resistance package reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25!C

Maximum Voltage and Current

Collector to Base Voltage (BV

Emitter to Base Voltage (BV

Collector Current (I

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

ELECTRICAL CHARACTERISTICS @ 25! ! ! ! C

SYMBOL

VSWR

FUNCTIONAL CHARACTERISTICS @ 25! ! ! ! C

$jc

NOTE 1: At rated output power and pulse conditions

Initial Issue June 1994

out

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

ebo

ces

2. At rated pulse conditions

CHARACTERISTICS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC – Current Gain

Thermal Resistance

)

ebo

ces

)

-65 to +200 !C

)

+200 !C

875 W

4.0 V

55 V

30 A

Vcc = 50 Volts

PW = 10 #sec

DF =

F = 1090 MHz

Ie = 20 mA

Ic = 25 mA

Vce = 5V, Ic = 300 mA

= 1025 – 1150 MHz

TEST CONDITIONS

The transistor

375 Watts, 50 Volts, Pulsed

Avionics 1025-1150 MHz

DME375A

MIN

375

6.5

4.0

CASE OUTLINE

55AW Style 1

TYP

MAX

0.2

UNITS

!C/W

R.A.063099

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DME375A Summary of contents

Page 1

... GENERAL DESCRIPTION The DME375A is a high power COMMON BASE bipolar transistor designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life ...

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DME375A Microsemi Corporation, DME375A Datasheet

DME375A

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